YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Rumah> Produk-produk> Peranti modul semikonduktor> Modul IGBT> Keupayaan Litar Pendek Tinggi 650V Modul Kuasa IGBT 200A
Keupayaan Litar Pendek Tinggi 650V Modul Kuasa IGBT 200A
Keupayaan Litar Pendek Tinggi 650V Modul Kuasa IGBT 200A
Keupayaan Litar Pendek Tinggi 650V Modul Kuasa IGBT 200A
Keupayaan Litar Pendek Tinggi 650V Modul Kuasa IGBT 200A
Keupayaan Litar Pendek Tinggi 650V Modul Kuasa IGBT 200A
Keupayaan Litar Pendek Tinggi 650V Modul Kuasa IGBT 200A

Keupayaan Litar Pendek Tinggi 650V Modul Kuasa IGBT 200A

$3310-99 Piece/Pieces

$25≥100Piece/Pieces

Jenis bayaran:L/C,Paypal
Incoterm:FOB,CFR,CIF
Pengangkutan:Ocean,Land
Port:SHANGHAI
Atribut Produk

Model No.YZPST-SKM195GB066D

JenamaYZPST

Tempat AsalChina

VCES650V

IC200A

ICRM400A

VGES±20V

Ptot695W

Pembungkusan & Penghantaran
Unit Jualan : Piece/Pieces
Jenis Pakej : 1. Pembungkusan anti-elektrostatik 2. Kotak Karton 3. Braid
Contoh Gambar :
Muat turun :
Modul IGBT SKM195GB066D
Penerangan produk

Jenis Modul Kuasa IGBT: YZPST-SKM195GB066D


Aplikasi

Penyongsang untuk memandu motor

AC dan DC Servo Drive Amplifier

UPS (bekalan kuasa tidak terganggu)

Mesin kimpalan bertukar lembut

ciri-ciri

VCE (SAT) yang rendah dengan teknologi medan parit

VCE (SAT) dengan pekali suhu positif

Termasuk FWD anti-selari pemulihan cepat & lembut

Keupayaan litar pintas tinggi (10US)

Struktur modul induktansi yang rendah

Suhu simpang maksimum 175 ℃

650V IGBT Power Module 200A



Mutlak Maksimum Penilaian

Parameter

Symbol

Conditions

Value

Unit

Collector-Emitter Voltage

VCES

VGE=0V, IC =1mA, Tvj=25

650

V

Continuous Collector Current

IC

Tc=100

200

A

Peak Collector Current

ICRM

tp=1ms

400

A

Gate-Emitter Voltage

VGES

Tvj=25

±20

V

Total Power Dissipation

(IGBT-inverter)

Ptot

Tc=25

Tvjmax=175

695

W

Ciri -ciri IGBT

Parameter Value Unit
Symbol Conditions Min. Typ. Max.
Gate-Emitter Threshold Voltage VGE(th) VGE=VCE,  IC =3.2mA,Tvj=25 5.1 5.8 6.3 V
VCE=650V,VGE=0V, Tvj=25 1 mA
Collector-Emitter Cut-off Current ICES VCE=650V,VGE=0V, Tvj=125 5 mA
Collector-Emitter Ic=200A,VGE=15V, Tvj=25 1.45 1.95 V
Saturation Voltage VCE(sat) Ic=200A,VGE=15V, Tvj=125 1.65 V
Input Capacitance Cies VCE=25V,VGE =0V, 12.3 nF
Reverse Transfer Capacitance Cres f=1MHz, Tvj=25 0.37 nF
Internal Gate Resistance Rgint 1 Ω
Turn-on Delay Time td(on) 48 Ns
Rise Time tr IC =200 A 48 Ns
Turn-off Delay Ttime td(off) VCE =300 V 348 Ns
Fall Time tf VGE = ±15V 58 Ns
Energy Dissipation During Turn-on Time Eon RG = 3.6Ω 2.32 mJ
Energy Dissipation During Turn-off Time Eoff Tvj=25 5.85 mJ
Turn-on Delay Time td(on) 48 Ns
Rise Time tr IC =200 A 48 Ns
Turn-off Delay Time td(off) VCE = 300V 364 Ns
Fall Time tf VGE = ±15V 102 Ns
Energy Dissipation During Turn-on Time Eon RG =3.6Ω 3.08 mJ
Energy Dissipation During Turn-off Time Eoff Tvj=125 7.92 mJ
SC Data Isc Tp≤10us,VGE=15V,Tvj=150 , Vcc=300V,VCEM≤650V 1000 A

Ciri -ciri diod

Parameter Value Unit
Symbol Conditions Min. Typ. Max.
Diode DC Forward Current IF Tc=100 200 A
Diode Peak Forward Current IFRM 400 A
IF=200A,Tvj=25 1.55 1.95 V
Forward Voltage VF IF=200A,Tvj=125 1.5 V
Parameter Value Unit
Symbol Conditions Min. Typ. Max.
Recovered Charge Qrr 8.05 uC
IF =200 A
VR=300V
Peak Reverse Recovery Current Irr -diF/dt =4200A/us 148 A
Reverse Recovery Energy Erec Tvj=25 1.94 mJ
Recovered Charge Qrr 16.9 uC
IF =200 A
VR=300V
Peak Reverse Recovery Current Irr -diF/dt =4200A/us 186 A
Reverse Recovery Energy Erec Tvj=125 3.75 mJ

Modul stici stic t c = 25 ° c melainkan dinyatakan sebaliknya

Parameter Symbol Conditions Value Unit
Min. Typ. Max.
Isolation voltage Visol t=1min,f=50Hz 2500 V
Maximum Junction Temperature Tjmax 150
Operating Junction Temperature Tvj op -40 125
Storage Temperature Tstg -40 125
per IGBT-inverter 0.19 K/W
Junction-to Case R θjc per Diode-inverter 0.31 K/W
Case to Sink R θcs Conductive grease applied 0.085 K/W
Module ElectrodesTorque Mt Recommended(M5) 2.5 5 N · m
Module-to-SinkTorque Ms Recommended(M6) 3 5 N · m
Weight of Module G 150 g

Pakej Dimensi

YZPST-SKM195GB066D Package Dimensions



Rumah> Produk-produk> Peranti modul semikonduktor> Modul IGBT> Keupayaan Litar Pendek Tinggi 650V Modul Kuasa IGBT 200A
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