Pemacu Kuasa Tinggi Kawalan Kuasa Thyristor 100A
dapatkan harga terkiniJenis bayaran: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Pengangkutan: | Ocean,Air |
Port: | Shanghai |
Jenis bayaran: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Pengangkutan: | Ocean,Air |
Port: | Shanghai |
Model No.: YZPST-TO94-KP100A06
Jenama: YZPST
Jenis Pakej | : | 1. Pembungkusan anti-elektrostatik 2. Kotak kadbod 3. Pembungkusan plastik pelindung |
Muat turun | : |
Kawalan Fasa Thyristor
YZPST-TO94-KP100A06
Ciri-ciri fasa kawalan thyristor: 1. semua reka bentuk fiffused 2. keupayaan semasa yang tinggi 3. keupayaan semasa lonjakan tinggi 4. voltan tinggi yang tinggi 5. tinggi DV / DT 6. pintu rendah semasa 7. pintu dinamik 8. impedans terma yang rendah. Aplikasi tipikal thyristor kuasa tinggi adalah bahawa modul ini mempunyai pemacu kuasa tinggi, pengendalian motor DC, bekalan kuasa voltan tinggi, suis kuasa menengah dan bekalan kuasa DC.
Penilaian maksimum dan ciri-ciri
Symbol |
Parameter |
Values |
Units |
Test Conditions |
|
ON-STATE |
|
|
|
||
ITAV |
Mean on-state current |
- |
A |
Sinewave,180° conduction,Tc=100°C |
|
ITRMS |
RMS value of on-state current |
100 |
A |
Nominal value |
|
ITSM |
Peak one cycle surge (non repetitive) current |
900 |
A |
10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 °C |
|
I2t |
I square t |
4050 |
A2s |
8.3 msec and 10.0 msec |
|
IL |
Latching current |
100 |
mA |
VD = 12 V; RL= 12 ohms |
|
IH |
Holding current |
30 |
mA |
VD = 12 V; I = 1 A |
|
VTM |
Peak on-state voltage |
2.0 |
V |
ITM = 150 A; Duty cycle £ 0.01%; Tj = 25 °C
|
|
di/dt |
Critical rate of rise of on-state current |
non-repetitive |
300 |
A/ms |
Gate drive 20V, 20Ω, tr≤1μs, Tj=Tjmax, anode voltage≤80% VDRM |
repetitive |
50 |
||||
BLOCKING |
|
|
|
||
VDRM VRRM |
Repetitive peak off state voltage Repetitive peak reverse voltage |
600 |
V |
|
|
VDSM VRSM |
Non repetitive peak off state voltage Non repetitive peak reverse voltage |
700 |
V |
|
|
IDRM IRRM |
Repetitive peak off state current Repetitive peak reverse current |
10 |
mA |
Tj = 125 °C ,VRRM VDRM applied |
|
dV/dt |
Critical rate of voltage rise |
100 |
V/ms |
TJ=TJmax, linear to 80% rated VDRM |
|
TRIGGEING |
|
|
|
||
PG(AV) |
Average gate power dissipation |
- |
W |
|
|
PGM |
Peak gate power dissipation |
- |
W |
|
|
IGM |
Peak gate current |
- |
A |
|
|
IGT |
Gate trigger current |
200 |
mA |
TC = 25 °C |
|
VGT |
Gate trigger voltage |
3.0 |
V |
TC = 25 °C |
|
VT(T0) |
Treshold voltage |
1 |
V |
|
|
rT |
Slope resistance |
2.4 |
mΩ |
|
|
VGD |
Gate non-trigger voltage |
0.2 |
V |
Tj = 125 °C |
|
SWITCHING |
|
|
|
||
tq |
Turn-off time |
- |
ms |
Tj = 125 °C |
|
td |
Delay time |
- |
Gate current 1A, di/dt=1A/μs, Vd=0.67%VDRM, TJ=25 °C |
||
Qrr |
Reverse recovery charge |
- |
|
|
Thermal And Mechanical
Symbol |
Parameter |
Values |
Units |
Test Conditions |
Tj |
Operating temperature |
-40~125 |
°C |
|
Tstg |
Storage temperature |
-40~150 |
°C |
|
R th (j-c) |
Thermal resistance - junction to case |
0.4 |
°C/W |
DC operation ,Single sided cooled |
R th (c-s) |
Thermal resistance - case to sink |
0.08 |
°C/W |
Single sided cooled |
P |
Mounting force |
- |
Nm |
|
W |
Weight |
- |
g |
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