VCE Low VCE Sat Trench Technology 450A Modul IGBT 1700V

VCE Low VCE Sat Trench Technology 450A Modul IGBT 1700V

Name: Modul IGBT GD450HFX170C6S
Uploaded: 2024-04-07T06:57:03+08:00
Description: Modul IGBT GD450HFX170C6S

$1605-49 Piece/Pieces

$120≥50Piece/Pieces

Jenis bayaran:	L/C,T/T,Paypal
Incoterm:	FOB,CFR,CIF
Pengangkutan:	Ocean,Land,Express,Others
Port:	SHANGHAI

Option:

VCES:1700V
VRRM:1700V
ICM:900A
VGES:±20V
PD:2542W

Hubungi sekarang

Penerangan produk

Atribut Produk

Pembungkusan & Penghantaran

Penerangan produk

Other information

Atribut Produk

Model No.: YZPST-GD450HFX170C6S

Jenama: YZPST

Tempat Asal: China

VCES: 1700V

VGES: ±20V

ICM: 900A

PD: 2542W

VRRM: 1700V

IF: 450A

IFM: 900A

Pembungkusan & Penghantaran

Unit Jualan	:	Piece/Pieces
Jenis Pakej	:	1. Pembungkusan anti-elektrostatik 2. Kotak Karton 3. Braid
Contoh Gambar	:
Muat turun	:

Modul IGBT GD450HFX170C6S

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Penerangan produk

Modul IGBT

YZPST-450HFX170C6S

1700V/450A 2 dalam satu pakej

Deskripsi umum

Modul Kuasa IGBT menyediakan ultra

Kehilangan pengaliran yang rendah serta litar pintas.

Mereka direka untuk aplikasi seperti

Inverter Umum dan UPS.

ciri-ciri
Teknologi IGBT Parit VCE (SAT) Rendah
Keupayaan litar pintas 10μs
VCE (SAT) dengan pekali suhu positif
Suhu simpang maksimum 175OC
Kes induktansi yang rendah
FWD anti-selari pemulihan yang cepat & lembut
Baseplate tembaga terpencil menggunakan teknologi DBC
Tipikal Aplikasi

Penyongsang untuk memandu motor

AC dan DC Servo Drive Amplifier

Bekalan kuasa tidak terganggu

IGBT

Symbol	Description	Value	Unit
VCES	Collector-Emitter Voltage	1700	V
VGES	Gate-Emitter Voltage	±20	V
IC	Collector Current @ TC=25oC @ TC= 100oC	706 450	A
ICM	Pulsed Collector Current tp=1ms	900	A
PD	Maximum Power Dissipation @ T =175oC	2542	W

Diod

Symbol	Description	Value	Unit
VRRM	Repetitive Peak Reverse Voltage	1700	V
IF	Diode Continuous Forward Current	450	A
IFM	Diode Maximum Forward Current tp=1ms	900	A

Modul

Symbol	Description	Value	Unit
Tjmax	Maximum Junction Temperature	175	oC
Tjop	Operating Junction Temperature	-40 to +150	oC
TSTG	Storage Temperature Range	-40 to +125	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	4000	V

IGBT Ciri -ciri Tc = 25oC melainkan dinyatakan sebaliknya

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
		IC=450A,VGE=15V, Tj=25oC		1.85	2.2
		IC=450A,VGE=15V, Tj=25oC		1.85	2.2
VCE(sat)	Collector to Emitter	IC=450A,VGE=15V, Tj=125oC		2.25		V
	Saturation Voltage	IC=450A,VGE=15V, Tj=150oC		2.35
VGE(th)	Gate-Emitter Threshold Voltage	IC= 18.0mA,VCE=VGE, Tj=25oC	5.6	6.2	6.8	V
ICES	Collector Cut-Off	VCE=VCES,VGE=0V,			5	mA
ICES	Current	Tj=25oC			5	mA
IGES	Gate-Emitter Leakage Current	VGE=VGES,VCE=0V, Tj=25oC			400	nA
RGint	Internal Gate Resistance			1.67		Ω
Cies	Input Capacitance	VCE=25V,f=1MHz,		54.2		nF
Cres	Reverse Transfer	VGE=0V		1.32		nF
Cres	Capacitance			1.32		nF
QG	Gate Charge	VGE=- 15…+15V		4.24		μC
td(on)	Turn-On Delay Time			179		ns
tr	Rise Time			105		ns
td(off)	Turn-Off Delay Time	VCC=900V,IC=450A, RG=3.3Ω,VGE=±15V, Tj=25oC		680		ns
tf	Fall Time			375		ns
Eon	Turn-On Switching			116		mJ
Eon	Loss			116		mJ
Eoff	Turn-Off Switching			113		mJ
Eoff	Loss			113		mJ
td(on)	Turn-On Delay Time			208		ns
tr	Rise Time			120		ns
td(off)	Turn-Off Delay Time	VCC=900V,IC=450A, RG=3.3Ω,VGE=±15V, Tj= 125oC		784		ns
tf	Fall Time			613		ns
Eon	Turn-On Switching			152		mJ
Eon	Loss			152		mJ
Eoff	Turn-Off Switching			171		mJ
Eoff	Loss			171		mJ
td(on)	Turn-On Delay Time			208		ns
tr	Rise Time			120		ns
td(off)	Turn-Off Delay Time	VCC=900V,IC=450A, RG=3.3Ω,VGE=±15V, Tj= 150oC		800		ns
tf	Fall Time			720		ns
Eon	Turn-On Switching			167		mJ
Eon	Loss			167		mJ
Eoff	Turn-Off Switching			179		mJ
Eoff	Loss			179		mJ
		tP≤10μs,VGE=15V,
ISC	SC Data	Tj=150oC,VCC= 1000V, VCEM≤1700V		1800		A

Diod Ciri -ciri Tc = 25oC melainkan dinyatakan sebaliknya

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
	Diode Forward	IF=450A,VGE=0V,Tj=25oC		1.8	2.25
VF	Voltage	IF=450A,VGE=0V,Tj= 125oC		1.95		V
		IF=450A,VGE=0V,Tj= 150oC		1.9
Qr	Recovered Charge	VR=900V,IF=450A,		105		μC
IRM	Peak Reverse	-di/dt=4580A/μs,VGE=- 15V Tj=25oC		198		A
IRM	Recovery Current			198		A
Erec	Reverse Recovery Energy			69		mJ
Qr	Recovered Charge	VR=900V,IF=450A,		187		μC
IRM	Peak Reverse	-di/dt=4580A/μs,VGE=- 15V Tj= 125oC		578		A
IRM	Recovery Current			578		A
Erec	Reverse Recovery Energy			129		mJ
Qr	Recovered Charge	VR=900V,IF=450A,		209		μC
IRM	Peak Reverse	-di/dt=4580A/μs,VGE=- 15V Tj= 150oC		585		A
IRM	Recovery Current			585		A
Erec	Reverse Recovery Energy			150		mJ