Pengawal kuasa thyristor C712L KT55CT

$801-99 Piece/Pieces

$40≥100Piece/Pieces

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Incoterm:	FOB,CFR,CIF
Pesanan minimum:	1 Piece/Pieces
Pengangkutan:	Ocean,Air
Port:	Shanghai

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Penerangan produk

Atribut Produk

Penerangan produk

Atribut Produk

Model No.: YZPST-C712L

Jenama: YZPST

私域 C712l 截取视频 15 秒 1-2.1mb

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Penerangan produk

THYRISTOR DAYA TINGGI UNTUK APLIKASI INVERTER DAN CHOPPER

YZPST-C712L

Ciri-ciri:

. Semua Struktur Tersebar

. Pusat Konfigurasi Gerbang Penguat

. Menyekat keupayaan hingga 2100 volt

. Masa Giliran Maksimum Dijamin

. Keupayaan dV / dt tinggi

. Peranti Berkumpul Tekanan

Sekatan - Keadaan Mati

VRRM (1)	VDRM (1)	VRSM (1)
2000	2000	2100

V _RRM = Voltan terbalik puncak berulang

V _DRM = Puncak berulang voltan keadaan mati

V _RSM = Voltan terbalik puncak tidak berulang (2)

Repetitive peak reverse leakage and off state leakage

I_{RRM /}I_DRM

20 mA

90 mA (3)

Critical rate of voltage rise

dV/dt (4)

800 V/msec

Catatan:

Semua penilaian ditentukan untuk Tj = 25 ^o C kecuali

dinyatakan sebaliknya.

(1) Semua peringkat voltan ditentukan untuk digunakan

Bentuk gelombang sinusoidal 50Hz / 60zHz di atas

julat suhu -40 hingga +125 ^o C.

(2) 10 msec. maks. lebar nadi

(3) Nilai maksimum untuk Tj = 125 ^o C.

(4) Nilai minimum untuk linear dan eksponensial

waveshape hingga 80% dinilai V _DRM . Pintu terbuka.

Tj = 125 ^o C.

(5) Nilai tidak berulang.

(6) Nilai di / dt ditentukan sesuai

dengan EIA / NIMA Standard RS-397, Bahagian

5-2-2-6. Nilai yang ditentukan akan menjadi tambahan

ke yang diperoleh dari rangkaian snubber,

terdiri daripada kapasitor 0.2 mF dan 20 ohm

rintangan selari dengan thristor di bawah

ujian.

Menjalankan - pada keadaan

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Average value of on-state current	I_T(AV)		1185		A	Sinewave,180^o conduction,T_c=80^oC
RMS value of on-state current	I_TRMS		1700		A	Nominal value
Peak one cPSTCle surge (non repetitive) current	I_TSM		- 18500		A A	8.3 msec (60Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC 10.0 msec (50Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC
I square t	I²t		1.66x10⁶		A²s	8.3 msec and 10.0 msec
Latching current	I_L		-		mA	V_D = 24 V; R_L= 12 ohms
Holding current	I_H		-		mA	V_{D =} 24 V; I = 2.5 A
Peak on-state voltage	V_TM		1.45		V	I_TM = 1000 A; Duty Cycle £ 0.01%; T_j =1 25 ^oC
Critical rate of rise of on-state current (5, 6)	di/dt		800		A/ms	Switching from V_DRM £ 1000 V, non-repetitive
Critical rate of rise of on-state current (6)	di/dt		200		A/ms	Switching from V_DRM £ 1000 V

Gating

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Peak gate power dissipation	P_GM		100		W	t_p= 40 us
Average gate power dissipation	P_G(AV)		5		W
Peak gate current	I_GM		-		A
Gate current required to trigger all units	I_GT		- 120 -		mA mA mA	V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC V_D = 6 V;R_L = 3 ohms;T_j = +25 ^oC V_D = 6 V;R_L = 3 ohms;T_j = +125^oC
Gate voltage required to trigger all units	V_GT		- 3.0 -		V V V	V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC V_D = 6 V;R_L = 3 ohms;T_j = 0-125^oC V_D = Rated V_DRM; R_L = 1000 ohms; T_j = + 125 ^oC
Peak negative voltage	V_GRM		20		V

Dinamik

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Delay time	t_d		-	0.7	ms	I_TM = 50 A; V_D = Rated V_DRM Gate pulse: V_G = 20 V; R_G = 20 ohms; t_r = 0.1 ms; t_p = 20 ms
Turn-off time (with V_R = -50 V)	t_q		40	-	ms	I_TM = 1000 A; di/dt = 25 A/ms; V_R ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% V_DRM; V_G = 0; T_j = 125 ^oC; Duty cPSTCle ³ 0.01%
Reverse recovery charge	Q_rr		*		mC	I_TM = 1000 A; di/dt = 25 A/ms; V_R ³ -50 V

KARAKTERISTIK HERMAL DAN MEKANIKAL

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Operating temperature	T_j	-40	+125		^oC
Storage temperature	T_stg	-40	+125		^oC
Thermal resistance - junction to case	R_Q_(j-c)		0.023 -		^oC/W	Double sided cooled Single sided cooled
Thermal resistamce - case to sink	R_Q_(c-s)		0.0075 -		^oC/W	Double sided cooled * Single sided cooled *
Mounting force	P	22.2	26.6		kN
Weight	W			-	g	About