Modul IGBT Switching 300A 1200V cepat

YZPST-300HF120TK-G2

Modul IGBT 300A 1200V

CIRI-CIRI
Keupayaan litar pintas yang tinggi, mengehadkan diri semasa litar pintas
CHIP IGBT (Teknologi Stop Field Trench+ Field)
VCE (SAT) dengan pekali suhu positif
Tukar cepat dan arus ekor pendek, kerugian beralih rendah
Diod roda percuma dengan pemulihan terbalik yang cepat dan lembut
Rasa suhu termasuk
Aplikasi
Aplikasi pensuisan frekuensi tinggi
Aplikasi perubatan
Kawalan gerakan/servo
Sistem UPS

Maksimum mutlak Penilaian T C = 25 ° C kecuali sebaliknya ditentukan

Symbol	Parameter	Test Conditions	Values	Unit
IGBT
VCES	Collector - Emitter Voltage	TVj=25°C	1250	V
VGES	Gate - Emitter Voltage		±30	V
IC	DC Collector Current	TC=25°C	450	A
		TC=80°C	300	A
ICM	Repetitive Peak Collector Current	tp=1ms	600	A
Ptot	Power Dissipation Per IGBT		2083	W
Diode
VRRM	Repetitive Reverse Voltage	TVj=25°C	1250	V
IF(AV)	Average Forward Current	TC=25°C	450	A
		TC=80°C	300	A
IFRM	Repetitive Peak Forward Current	tp=1ms	600	A

Ciri -ciri elektrik dan terma TC = 25 ° C melainkan dinyatakan sebaliknya

Symbol	Parameter	Test Conditions			Min.	Typ.	Max.	Unit
IGBT
VGE(th)	Gate - Emitter Threshold Voltage	VCE=VGE, IC=2.0mA			5.0		6.8	V
VCE(sat)	Collector - Emitter	IC=300A, VGE=15V, TVj=25°C				2.2	2.6	V
	Saturation Voltage	IC=300A, VGE=15V, TVj=125°C				2.65		V
ICES	Collector Leakage Current	VCE=1250V, VGE=0V, TVj=25°C					1	mA
		VCE=1250V, VGE=0V, TVj=125°C					5	mA
Rgint	Integrated Gate Resistor	Per switch				5		Ω
IGES	Gate Leakage Current	VCE=0V,VGE±15V, TVj=125°C			-500		500	nA
Cies	Input Capacitance	VCE=25V, VGE=0V, f =1MHz				21.3		nF
Cres	Reverse Transfer Capacitance					1.42		nF
td(on)	Turn - on Delay Time	VCC=600V,IC=300A,		TVj =25°C		393		ns
		RG =3.3Ω,		TVj =125°C		395		ns
tr	Rise Time	VGE=±15V,		TVj =25°C		130		ns
		Inductive Load		TVj =125°C		135		ns
td(off)	Turn - off Delay Time	VCC=600V,IC=300A,		TVj =25°C		570		ns
		RG =3.3Ω,		TVj =125°C		600		ns
tf	Fall Time	VGE=±15V,		TVj =25°C		145		ns
		Inductive Load		TVj =125°C		155		ns
Eon	Turn - on Energy	VCC=600V,IC=300A,		TVj =25°C		7.7		mJ
		RG =3.3Ω,		TVj =125°C		14.5		mJ
Eoff	Turn - off Energy	VGE=±15V,		TVj =25°C		26.3		mJ
		Inductive Load		TVj =125°C		33.5		mJ
ISC	Short Circuit Current	tpsc≤10µS , VGE=15V TVj=125°C,VCC=900V				2100		A
RthJC	Junction-to-Case Thermal Resistance (Per IGBT)						0.07	K /W
Diode
VF	Forward Voltage	IF=300A , VGE=0V, TVj =25°C				1.82	2.25	V
		IF=300A , VGE=0V, TVj =125°C				2.0		V
Qrr	Reversed Charge	IF=300A , VR=600V				40		uC
IRRM	Max. Reverse Recovery Current	diF/dt=-2360A/μs				250		A
Erec	Reverse Recovery Energy	TVj =125°C				18.5		mJ
RthJCD	Junction-to-Case Thermal Resistance		(Per Diode)				0.12	K /W

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