$1655-49 Piece/Pieces
$135≥50Piece/Pieces
| Jenis bayaran: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
| Pengangkutan: | Ocean,Land |
| Port: | SHANGHAI |
Model No.: YZPST-G900WB120B6TC
Jenama: YZPST
Tempat Asal: China
VCES: 1200V
VGES: ±20V
IC TC=25℃: 880A
IC TC=95℃: 900A
ICM: 1200A
Ptot: 3125W
IF(AV): 900A
| Unit Jualan | : | Piece/Pieces |
| Jenis Pakej | : | 1. Pembungkusan anti-elektrostatik 2. Kotak Karton 3. Braid |
| Contoh Gambar | : |
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| Muat turun | : |
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Modul IGBT 1200V 900A
P/N: YZPST-G900WB120B6TC
Produk CIRI-CIRI
Cip IGBT (parit+fs)
Voltan tepu rendah dan pekali suhu positif
Tukar cepat dan arus ekor pendek
Diod roda percuma dengan pemulihan terbalik yang cepat dan lembut
Rasa suhu termasuk
AplikasiKawalan Motor AC
Kawalan gerakan/servo
Penyongsang dan bekalan kuasa
Sel fotovoltaik/bahan bakar
Penilaian maksimum igbt-absolut ( t c = 25 ° C melainkan jika tidak ditentukan )
| Symbol | Parameter/Test Conditions | Values | Unit | |
| VCES | Collector Emitter Voltage | TJ=25℃ | 1200 | V |
| VGES | Gate Emitter Voltage | ±20 | ||
| IC | DC Collector Current | TC=25℃, TJmax =175℃ | 880 | |
| TC=95℃, TJmax =175℃ | 900 | A | ||
| ICM | Repetitive Peak Collector Current | tp=1ms | 1200 | |
| Ptot | Power Dissipation Per IGBT | TC=25℃, TJmax =175℃ | 3125 | W |
Penilaian maksimum diod-absolut ( T c = 25 ° C melainkan jika tidak ditentukan )
| Symbol | Parameter/Test Conditions | Values | Unit | |
| VRRM | Repetitive Reverse Voltage | TJ=25℃ | 1200 | V |
| IF(AV) | Average Forward Current | 900 | A | |
| IFRM | Repetitive Peak Forward Current | tp=1ms | 1200 | |
| I2t | TJ =150℃, t=10ms, VR=0V | 45 | kA2s | |
IGBT Inverter
Ciri -ciri elektrik ( T c = 25 ° C melainkan jika tidak ditentukan )
| Symbol | Parameter/Test Conditions | Min. | Typ. | Max. | Unit | ||
| VGE(th) | Gate Emitter Threshold Voltage | VCE=VGE , IC=24mA | 5 | 5.8 | 6.5 | ||
| Collector Emitter | IC=900A, VGE=15V, TJ=25℃ | 1.9 | 2.3 | ||||
| VCE(sat) | Saturation Voltage | IC=900A, VGE=15V, TJ=125℃ | 2.2 | V | |||
| IC=900A, VGE=15V, TJ=150℃ | 2.25 | ||||||
| ICES | Collector Leakage Current | VCE=1200V, VGE=0V, TJ=25℃ | 1 | mA | |||
| VCE=1200V, VGE=0V, TJ=150℃ | 10 | ||||||
| IGES | Gate Leakage Current | VCE=0V,VGE=±20V, TJ=25℃ | -400 | 400 | nA | ||
| RGint | Integrated Gate Resistor | 0.7 | Ω | ||||
| Qg | Gate Charge | VCE=900V, IC=900A , VGE=15V | 3.1 | µC | |||
| Cies | Input Capacitance | VCE=25V, VGE=0V, f =1MHz | 43.2 | nF | |||
| Cres | Reverse Transfer Capacitance | 2.07 | nF | ||||
| td(on) | Turn on Delay Time | VCC=600V,IC=900A RG =1.5Ω , | TJ=25℃ | 100 | ns | ||
| VGE=±15V, | TJ=150℃ | 110 | ns | ||||
| tr | Rise Time | Inductive Load | TJ=25℃ | 85 | ns | ||
| TJ=150℃ | 95 | ns | |||||
| td(off) | Turn off Delay Time | VCC=600V,IC=900A RG =1.5Ω , | TJ=25℃ | 530 | ns | ||
| VGE=±15V, | TJ=150℃ | 580 | ns | ||||
| tf | Fall Time | Inductive Load | TJ=25℃ | 65 | ns | ||
| TJ=150℃ | 215 | ns | |||||
| TJ=25℃ | 55 | mJ | |||||
| Eon | Turn on Energy | TJ=125℃ | 85 | mJ | |||
| VCC=600V,IC=900A RG =1.5Ω , | TJ=150℃ | 95 | mJ | ||||
| VGE=±15V, | TJ=25℃ | 45 | mJ | ||||
| Eoff | Turn off Energy | Inductive Load | TJ=125℃ | 58 | mJ | ||
| TJ=150℃ | 63 | mJ | |||||
| ISC | Short Circuit Current | tpsc≤10µs , VGE=15V | 2200 | A | |||
| TJ=150℃,VCC=800V | |||||||
| RthJC | Junction to Case Thermal Resistance （Per IGBT） | 0.048 | K /W | ||||
Garis Pakej
Tel: 86-514-87782298
Whatsapp: +8613805278321
Alamat: 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu China
Laman web: https://ms.yzpst.com
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