YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Rumah> Produk-produk> Peranti modul semikonduktor> Modul IGBT> YZPST 1200V 150B120F23 Modul Kuasa IGBT
YZPST 1200V 150B120F23 Modul Kuasa IGBT
YZPST 1200V 150B120F23 Modul Kuasa IGBT
YZPST 1200V 150B120F23 Modul Kuasa IGBT
YZPST 1200V 150B120F23 Modul Kuasa IGBT
YZPST 1200V 150B120F23 Modul Kuasa IGBT
YZPST 1200V 150B120F23 Modul Kuasa IGBT
YZPST 1200V 150B120F23 Modul Kuasa IGBT

YZPST 1200V 150B120F23 Modul Kuasa IGBT

$31.510-99 Piece/Pieces

$23.5≥100Piece/Pieces

Jenis bayaran:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
Pengangkutan:Ocean,Land
Port:SHANGHAI
Atribut Produk

Model No.YZPST-150B120F23

JenamaYZPST

Tempat AsalChina

VCES1200V

IC150A

ICRM300A

VGES±20V

Ptot968W

Pembungkusan & Penghantaran
Unit Jualan : Piece/Pieces
Jenis Pakej : 1. Pembungkusan anti-elektrostatik 2. Kotak Karton 3. Braid
Muat turun :
Modul IGBT 1200V150A 150B120F23
Penerangan produk
Modul Kuasa IGBT YZPST-150B120F23
VCE = 1200V IC = 150A
Aplikasi
Penyongsang untuk memandu motor
AC dan DC Servo Drive Amplifier
UPS (bekalan kuasa tidak terganggu)
Mesin kimpalan bertukar lembut
ciri-ciri
VCE (SAT) yang rendah dengan teknologi medan parit
VCE (SAT) dengan pekali suhu positif
Termasuk FWD anti-selari pemulihan cepat & lembut
Keupayaan litar pintas tinggi (10US)
Struktur modul induktansi yang rendah

Suhu simpang maksimum 175 ℃

YZPST-150B120F23 IGBT Module


Mutlak Maksimum Penilaian

Parameter

Symbol

Conditions

Value

Unit

Collector-Emitter Voltage

VCES

VGE=0V, IC =1mA, Tvj=25

1200

V

Continuous Collector Current

IC

Tc=100

150

A

Peak Collector Current

ICRM

tp=1ms

300

A

Gate-Emitter Voltage

VGES

Tvj=25

±20

V

Total Power Dissipation

(IGBT-inverter)

Ptot

Tc=25

Tvjmax=175

968

W

Ciri -ciri IGBT

Parameter Value Unit
Symbol Conditions Min. Typ. Max.
Gate-Emitter Threshold Voltage VGE(th) VGE=VCE,  IC =4mA,Tvj=25 5.2 6 6.8 V
VCE=1200V,VGE=0V, Tvj=25 1 mA
Collector-Emitter Cut-off Current ICES VCE=1200V,VGE=0V, Tvj=125 5 mA
Collector-Emitter Ic=150A,VGE=15V, Tvj=25 1.8 2.1 V
Saturation Voltage VCE(sat) Ic=150A,VGE=15V, Tvj=125 2 V
Input Capacitance Cies 9.8 nF
Output Capacitance Coes VCE=25V,VGE =0V, 0.82 nF
Reverse Transfer Capacitance Cres f=1MHz, Tvj=25 0.48 nF
Internal Gate Resistance Rgint 2.5 Ω
Turn-on Delay Time td(on) 185 Ns
Rise Time tr IC =150 A 55 Ns
Turn-off Delay Ttime td(off) VCE = 600 V 360 Ns
Fall Time tf VGE = ±15V 115 Ns
Energy Dissipation During Turn-on Time Eon RG = 5.1Ω 15.4 mJ
Energy Dissipation During Turn-off Time Eoff Tvj=25 11.6 mJ
Turn-on Delay Time td(on) 200 Ns
Rise Time tr IC =150 A 60 Ns
Turn-off Delay Time td(off) VCE = 600 V 420 Ns
Fall Time tf VGE = ±15V 120 Ns
Energy Dissipation During Turn-on Time Eon RG =5.1Ω 23.2 mJ
Energy Dissipation During Turn-off Time Eoff Tvj=125 17 mJ
Tp≤10us,VGE=15V,
SC Data Isc Tvj=150,Vcc=600V, 500 A
VCEM≤1200V

Ciri -ciri diod

Parameter Value Unit
Symbol Conditions Min. Typ. Max.
Diode DC Forward Current IF Tc=100 150 A
Diode Peak Forward Current IFRM 300 A
IF=150A,Tvj=25 1.8 2.3 V
Forward Voltage VF IF=150A,Tvj=125 1.85 V
Parameter Value Unit
Symbol Conditions Min. Typ. Max.
Recovered Charge Qrr 13.4 uC
IF =150 A
Peak Reverse Recovery Current Irr VR=600V 143 A
Reverse Recovery Time trr -diF/dt =2200A/us 160 ns
Reverse Recovery Energy Erec Tvj=25 9.1 mJ
Recovered Charge Qrr 26.1 uC
IF =150 A
Peak Reverse Recovery Current Irr VR=600V 178 A
Reverse Recovery Time trr -diF/dt =2200A/us 440 ns
Reverse Recovery Energy Erec Tvj=125 15.4 mJ

Ciri -ciri Modul T C = 25 ° C Kecuali dinyatakan sebaliknya

Parameter Symbol Conditions Value Unit
Min. Typ. Max.
Isolation voltage Visol t=1min,f=50Hz 2500 V
Maximum Junction Temperature Tjmax 150
Operating Junction Temperature Tvjop -40 125
Storage Temperature Tstg -40 125
per IGBT-inverter 0.155 K/W
Junction-to Case R θjc per Diode-inverter 0.292 K/W
Case to Sink R θcs Conductive grease applied 0.05 K/W
Module ElectrodesTorque Mt Recommended(M5) 2.5 5 N·m
Module-to-SinkTorque Ms Recommended(M6) 3 5 N·m
Weight of Module G 150 g

Pakej Dimensi

YZPST-150B120F23 Dimensions



Rumah> Produk-produk> Peranti modul semikonduktor> Modul IGBT> YZPST 1200V 150B120F23 Modul Kuasa IGBT
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