YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Rumah> Produk-produk> Peranti modul semikonduktor> Modul IGBT> Operasi Kekerapan Tinggi 1700V All-SIC Modul
Operasi Kekerapan Tinggi 1700V All-SIC Modul
Operasi Kekerapan Tinggi 1700V All-SIC Modul
Operasi Kekerapan Tinggi 1700V All-SIC Modul
Operasi Kekerapan Tinggi 1700V All-SIC Modul
Operasi Kekerapan Tinggi 1700V All-SIC Modul
Operasi Kekerapan Tinggi 1700V All-SIC Modul

Operasi Kekerapan Tinggi 1700V All-SIC Modul

$7905-19 Piece/Pieces

$660≥20Piece/Pieces

Jenis bayaran:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
Pengangkutan:Ocean,Land
Port:SHANGHAI
Atribut Produk

Model No.YZPST-230B170F62

JenamaYZPST

Tempat AsalChina

VDSmax1700V

ID Tc=25℃230A

ID Tc=100℃200A

VGSmax-10V/+25V

VGSop-5V/+20V

TJ TSTG-40℃+155℃

Pembungkusan & Penghantaran
Unit Jualan : Piece/Pieces
Jenis Pakej : 1. Pembungkusan anti-elektrostatik 2. Kotak Karton 3. Braid
Muat turun :
SIC Modul 230B170F62
Penerangan produk
Modul Kuasa Semua SIC P/N: YZPST-230B170F62 Modul SIC
VDS = 1700V RDS (ON) = 7.5mΩ
Aplikasi
Pemanasan induksi
Penyongsang solar dan angin
Penukar dc/ac
ciri-ciri
Kerugian ultra rendah
Operasi frekuensi tinggi
Arus pemulihan terbalik sifar dari diod
Arus ekor giliran sifar dari MOSFET
Biasanya, operasi peranti yang selamat

Kemudahan paralel

1700V 7.5 mΩ in one-package


Penilaian maksimum mutlak (T c = 25 ℃ Kecuali dinyatakan sebaliknya)

Parameter
Symbol Conditions Value Unit
Drain-source voltage VDSmax 1700 V
VGS=20V, Tc=25℃ 230
Continuous collector current ID VGS=20V, Tc=100 200 A
Gate- source voltage VGSmax Absolute maximum values -10V/+25V V
Gate-source voltage VGSop Recommended operational values -5V/+20V V
Operating Junction and Storage Temperature TJ TSTG -40~+155

Elektrik Ciri -ciri (T c = 25melainkan dinyatakan sebaliknya)

Parameter Value Unit
Symbol Conditions Min. Typ. Max.
Gate threshold voltage VGSth ID =108mA 2 2.6 4 V
Zero gate voltage drain current IDSS VDS=1700V,VGS=0V 6 600 uA
Gate-source leakage current IGSS VGS=20 V 1500 nA
VGS=20V, IDS=230A 7.5 11.7 ma
On state resistance RDS(on) VGS=20V, IDS=230A,Tvj=150℃ 15 ma
Input capacitance Ciss 21.3 nF
Output capacitance Coss VGS=0V,VDS=1000V, VAC=25mV f=1MHz 0.99 nF
Reverse transfer capacitance Crss 0.04 nF
Gate-source charge QGS 324 nC
Gate-drain charge QGD VDS=1200V,VGS = +20V/-5V 150 nC
Total gate charge QG ID =300 A 1158 nC
Turn-on delay time td(on) 27 ns
ID =180A
Rise time tr VDS =1200V 32 ns
Turn-off delay time td(off) VGS = +20V/-5V 36 ns
Fall time tf RG= 2.5a 10 ns
Energy dissipation during turn-on time ID =180A
Eon VDS =1200V 1.2 mJ
VGS = +20V/-5V
RG= 2.5a
Energy dissipation during turn-off time Eoff L=200uH 2 mJ
IF=300A 1.6 1.9 V
Diode forward voltage VSD IF=300A,Tvj=150℃ 2.2 2.8 V

Modul Ciri -ciri CS (T c = 25 ℃ melainkan dinyatakan sebaliknya)

Parameter Value
Symbol Conditions Min. Typ. Max. Unit
Case isolation voltage Visol t=1min,f=50Hz 2500 V
Maximum junction temperature Tjmax 175
Operating junction temperature Tvj op -40 150
Storage temperature Tstg -40 125
Module electrodes torque Mt Recommended(M6) 3 6
Module to heatsink torque Ms Recommended(M6) 3 6 Nm
Weight of module G 300 g

Litar Rajah

Circuit Diagram



Dimensi pakej

Package Dimensions


Rumah> Produk-produk> Peranti modul semikonduktor> Modul IGBT> Operasi Kekerapan Tinggi 1700V All-SIC Modul
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