YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Rumah> Produk-produk> Peranti modul semikonduktor> Modul IGBT> Kes Induktansi Rendah 600HFX170C6S 1700V 600A Modul IGBT
Kes Induktansi Rendah 600HFX170C6S 1700V 600A Modul IGBT
Kes Induktansi Rendah 600HFX170C6S 1700V 600A Modul IGBT
Kes Induktansi Rendah 600HFX170C6S 1700V 600A Modul IGBT
Kes Induktansi Rendah 600HFX170C6S 1700V 600A Modul IGBT
Kes Induktansi Rendah 600HFX170C6S 1700V 600A Modul IGBT
Kes Induktansi Rendah 600HFX170C6S 1700V 600A Modul IGBT
Kes Induktansi Rendah 600HFX170C6S 1700V 600A Modul IGBT

Kes Induktansi Rendah 600HFX170C6S 1700V 600A Modul IGBT

$1905-99 Piece/Pieces

$140≥100Piece/Pieces

Jenis bayaran:L/C,Paypal,T/T
Incoterm:FOB,CFR,CIF
Pengangkutan:Ocean,Land,Express,Others
Port:SHANGHAI
Atribut Produk

Model No.YZPST-600HFX170C6S

JenamaYZPST

Tempat AsalChina

VCES1700V

VGES±20V

ICM1200A

PD4166W

VRRM1700V

IF600A

IFM1200A

Pembungkusan & Penghantaran
Unit Jualan : Piece/Pieces
Jenis Pakej : 1. Pembungkusan anti-elektrostatik 2. Kotak Karton 3. Braid
Contoh Gambar :
Muat turun :
Modul IGBT GD600HFX170C6S
Penerangan produk
Modul IGBT YZPST-600HFX170C6S

1700V/600A 2 dalam satu pakej

Deskripsi umum
Modul Kuasa IGBT menyediakan ultra
Kehilangan pengaliran yang rendah serta litar pintas.
Mereka direka untuk aplikasi seperti
Inverter Umum dan UPS.

YZPST-GD600HFX170C6S
ciri-ciri
. Teknologi IGBT Parit VCE (SAT) Rendah
. Keupayaan litar pintas 10μs
. VCE (SAT) dengan pekali suhu positif
. Suhu simpang maksimum 175OC
. Kes induktansi yang rendah
. FWD anti-selari pemulihan yang cepat & lembut
. Baseplate tembaga terpencil menggunakan teknologi DBC

Aplikasi biasa
. Penyongsang untuk memandu motor
. AC dan DC Servo Drive Amplifier
. Bekalan kuasa tidak terganggu

IGBT

Symbol

Description

Value

Unit

VCES

Collector-Emitter Voltage

1700

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current   TC=25oC

 TC= 100oC

1069

600

A

ICM

Pulsed Collector Current  tp=1ms

1200

A

PD

Maximum Power Dissipation   T =175oC

4166

W

Diod

Symbol

Description

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

1700

V

IF

Diode Continuous Forward Current

600

A

IFM

Diode Maximum Forward Current  tp=1ms

1200

A

Modul

Symbol

Description

Value

Unit

Tjmax

Maximum Junction Temperature

175

oC

Tjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage  RMS,f=50Hz,t=1min

4000

V

IGBT Ciri -ciri Tc = 25oC melainkan dinyatakan sebaliknya

Symbol Parameter Test Conditions Min. Typ. Max. Unit
IC=600A,VGE=15V, Tj=25oC 1.85 2.2
VCE(sat) Collector to Emitter IC=600A,VGE=15V, Tj=125oC 2.25 V
Saturation Voltage IC=600A,VGE=15V, Tj=150oC 2.35
VGE(th) Gate-Emitter Threshold Voltage IC= 12.0mA,VCE=VGE, Tj=25oC 5.6 6.2 6.8 V
ICES Collector Cut-Off VCE=VCES,VGE=0V, 5 mA
Current Tj=25oC
IGES Gate-Emitter Leakage Current VGE=VGES,VCE=0V, Tj=25oC 400 nA
RGint Internal Gate Resistance 1.3 Ω
Cies Input Capacitance VCE=25V,f=1MHz, 72.3 nF
Cres Reverse Transfer VGE=0V 1.75 nF
Capacitance
QG Gate Charge VGE=- 15…+15V 5.66 μC
td(on) Turn-On Delay Time 170 ns
tr Rise Time 67 ns
td(off) Turn-Off Delay Time VCC=900V,IC=600A,  RG= 1.0Ω,VGE=±15V, Tj=25oC 527 ns
tf Fall Time 138 ns
Eon Turn-On Switching 154 mJ
Loss
Eoff Turn-Off Switching 132 mJ
Loss
td(on) Turn-On Delay Time 168 ns
tr Rise Time 80 ns
td(off) Turn-Off Delay Time VCC=900V,IC=600A,  RG= 1.0Ω,VGE=±15V, Tj= 125oC 619 ns
tf Fall Time 196 ns
Eon Turn-On Switching 236 mJ
Loss
Eoff Turn-Off Switching 198 mJ
Loss
td(on) Turn-On Delay Time 192 ns
tr Rise Time 80 ns
td(off) Turn-Off Delay Time VCC=900V,IC=600A,  RG= 1.0Ω,VGE=±15V, Tj= 150oC 640 ns
tf Fall Time 216 ns
Eon Turn-On Switching 259 mJ
Loss
Eoff Turn-Off Switching 215 mJ
Loss
tP≤10μs,VGE=15V,
ISC SC Data Tj=150oC,VCC= 1000V, VCEM≤1700V 2400 A
Dimensi pakej

YZPST-GD600HFX170C6S(7)

Rumah> Produk-produk> Peranti modul semikonduktor> Modul IGBT> Kes Induktansi Rendah 600HFX170C6S 1700V 600A Modul IGBT
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