Pantas beralih ke-263 7N90A0 Silicon N-Channel Power MOSFET
$0.452000-19999 Piece/Pieces
$0.35≥20000Piece/Pieces
Jenis bayaran: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Pengangkutan: | Ocean,Land,Express,Others |
Port: | SHANGHAI |
$0.452000-19999 Piece/Pieces
$0.35≥20000Piece/Pieces
Jenis bayaran: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Pengangkutan: | Ocean,Land,Express,Others |
Port: | SHANGHAI |
Model No.: YZPST-7N90A0
Jenama: YZPST
Tempat Asal: China
V DSS: 900V
ID: 7A
PD (TC =25℃): 160W
RDS(ON)TYP: 1.4Ω
A1 IDM: 28A
VGS: ±30V
A2 EAS: 700mJ
A1 EAR: 60mJ
Unit Jualan | : | Piece/Pieces |
Jenis Pakej | : | 1. Pembungkusan anti-elektrostatik 2. Kotak Karton 3. Braid |
Muat turun | : |
100% Ujian Tenaga Avalanche Pulse Tunggal
Symbol | Parameter | Rating | Units |
V DSS | Drain-to- Source Voltage | 900 | V |
ID | Continuous Drain Current | 7 | A |
Continuous Drain Current TC = 100 °C | 5 | A | |
a1 | Pulsed Drain Current | 28 | A |
IDM | |||
VGS | Gate-to-Source Voltage | ±30 | V |
a2 | Single Pulse Avalanche Energy | 700 | mJ |
EAS | |||
a1 | Avalanche Energy , Repetitive | 60 | mJ |
EAR | |||
a1 | Avalanche Current | 2.4 | A |
IAR | |||
dv/dt | Peak Diode Recovery dv/dt | 5 | V/ns |
a3 | |||
PD | Power Dissipation | 160 | W |
Derating Factor above 25 °C | 1.28 | W/℃ | |
TJ ,Tstg | Operating Junction and Storage | 150 ,– 55 to 150 | ℃ |
Temperature Range | |||
TL | MaximumTemperature for Soldering | 300 | ℃ |
Ciri -ciri Elektrik CS (TC = 25 ℃ melainkan dinyatakan sebaliknya):
OFF Characteristics | ||||||
Symbol | Parameter | Test Conditions | Rating | Units | ||
Min. | Typ. | Max. | ||||
V DSS | Drain to Source Breakdown | VGS =0V, I D =250µA | 900 | -- | -- | V |
Voltage | ||||||
ΔBVDSS/ ΔTJ | Bvdss Temperature Coefficient | ID=250uA, Reference25℃ | -- | 0.8 | -- | V/℃ |
VDS = 900V, VGS = 0V, | -- | -- | 1 | |||
IDSS | Drain to Source Leakage Current | Ta = 25℃ | µ A | |||
VDS =720V, VGS = 0V, | -- | -- | 250 | |||
Ta = 125℃ | ||||||
IGSS( F) | Gate to Source Forward Leakage | VGS = +30V | -- | -- | 10 | µ A |
IGSS(R ) | Gate to Source Reverse Leakage | VGS =- 30V | -- | -- | -10 | µ A |
ON Characteristics | ||||||
Symbol | Parameter | Test Conditions | Rating | Units | ||
Min. | Typ. | Max. | ||||
RDS(ON) | Drain-to-Source On- Resistance | VGS =10V, I D =3.0A | -- | 1.4 | 1.8 | Ω |
VGS(TH ) | Gate Threshold Voltage | VDS = VGS, I D = 250µA | 2.5 | -- | 4.5 | V |
Pulse width tp ≤380µs,δ≤2% |
Dynamic Characteristics | ||||||
Symbol | Parameter | Test Conditions | Rating | Units | ||
Min. | Typ. | Max. | ||||
gfs | Forward Transconductance | VDS = 15V, I D =3A | -- | 8 | -- | S |
Ciss | Input Capacitance | -- | 1460 | -- | ||
Coss | Output Capacitance | VGS = 0V VDS = 25V | -- | 130 | -- | pF |
Crss | Reverse Transfer Capacitance | f = 1.0MHz | -- | 23 | -- |
Resistive Switching Characteristics | ||||||
Symbol | Parameter | Test Conditions | Rating | Units | ||
Min. | Typ. | Max. | ||||
td(ON) | Turn-on Delay Time | -- | 22 | -- | ||
tr | Rise Time | I D =7.0A V DD = 450V | -- | 45 | -- | |
td(OFF ) | Turn-Off Delay Time | VGS = 10V RG = 9.1Ω | -- | 33 | -- | ns |
tf | Fall Time | -- | 37 | -- | ||
Qg | Total Gate Charge | -- | 37 | -- | ||
Qgs | Gate to Source Charge | I D =7 . 0A V DD =450V | -- | 8 | -- | nC |
Qgd | Gate to Drain (“ Miller ”)Charge | VGS = 10V | -- | 14 | -- |
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