YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Rumah> Produk-produk> Pakej plastik semikonduktor> Transistor silikon> BD139-16 NPN Silicon Transistor Complementer BD140-16
BD139-16 NPN Silicon Transistor Complementer BD140-16
BD139-16 NPN Silicon Transistor Complementer BD140-16
BD139-16 NPN Silicon Transistor Complementer BD140-16
BD139-16 NPN Silicon Transistor Complementer BD140-16
BD139-16 NPN Silicon Transistor Complementer BD140-16
BD139-16 NPN Silicon Transistor Complementer BD140-16
BD139-16 NPN Silicon Transistor Complementer BD140-16

BD139-16 NPN Silicon Transistor Complementer BD140-16

$0.0320000-59999 Piece/Pieces

$0.02≥60000Piece/Pieces

Jenis bayaran:T/T,Paypal
Incoterm:FOB,CFR,CIF
Pengangkutan:Ocean,Land
Port:SHANGHAI
Atribut Produk

Model No.YZPST-BD139-16

JenamaYZPST

Tempat AsalChina

VCBO80V

VCEO80V

VEBO5.0V

IC1.5A

IB0.5A

Ptot12.5W

Tj150℃

Tstg-55~150℃

Pembungkusan & Penghantaran
Unit Jualan : Piece/Pieces
Muat turun :
Transistor BD139-16 TO-126FCU
Penerangan produk

NPN Silicon Transistor P/N: YZPST-BD139-16

BD139-16 NPN Silicon Transistor Jenis PNP Pelengkap adalah BD140-16

Penerangan
BD139-16 adalah transistor NPN planar epitaxial silikon
Dalam pakej plastik JEDEC TO-126, yang direka untuk audio
penguat dan pemandu menggunakan pelengkap atau kuasi
Litar Komputer.

Jenis PNP pelengkap adalah BD140-16

YZPST-BD139-16


Penilaian maksimum mutlak ( TA = 25 o c)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

VCBO

80

V

Collector-Emitter Voltage

VCEO

80

V

Emitter-Base Voltage

VEBO

5.0

V

Collector Current

IC

1.5

A

Base Current

IB

0.5

A

Total Dissipation at

Ptot

12.5

W

Max. Operating Junction Temperature

Tj

150

oC

Storage Temperature

Tstg

-55~150

oC

Ciri -ciri elektrik (TA = 25 o c)

Parameter Symbol Test   Conditions Min. Typ. Max. Unit
Collector Cut-off Current ICBO VCB  = 80V, IE  = 0 10 μA
Emitter Cut-off Current IEBO
VEB  = 5.0V, IC  = 0 10 μA
VCEO
Collector-Emitter Sustaining Voltage IC  = 1.0mA, IB  = 0 80 V
VCE  = 2.0V, IC  = 0.15A 100 250
DC Current Gain hFE
VCE  = 2.0V, IC  = 0.5A 100
VCE(sat)
Collector-Emitter Saturation Voltage IC  = 0.5A, IB  = 0.05A 0.5 V
VBE
Base-Emitter Voltage IC  = 0.5A, VCE  = 2.0V 1 V
fT
Transition Frequency VCE  = 5V,IC  = 50mA 80 MHz


Rumah> Produk-produk> Pakej plastik semikonduktor> Transistor silikon> BD139-16 NPN Silicon Transistor Complementer BD140-16
苏ICP备05018286号-1
Hantar pertanyaan
*
*

We will contact you immediately

Fill in more information so that we can get in touch with you faster

Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.

Menghantar