TO-126 BD140-16 adalah transistor PNP Silicon Epitaxial PNP jenis NPN adalah BD139-16
$0.0310000-99999 Piece/Pieces
$0.02≥100000Piece/Pieces
Jenis bayaran: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Pengangkutan: | Ocean,Land,Others |
Port: | SHANGHAI |
$0.0310000-99999 Piece/Pieces
$0.02≥100000Piece/Pieces
Jenis bayaran: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Pengangkutan: | Ocean,Land,Others |
Port: | SHANGHAI |
Model No.: YZPST-BD140-16
Jenama: YZPST
Permohonan: Mikrofon, Tidak berkenaan
Jenis Bekalan: Pengilang asal, ODM, yang lain
Bahan Rujukan: Lembaran data, Foto, yang lain
Jenis Pakej: Gunung Permukaan
Kaedah Pemasangan: Melalui lubang, Tidak berkenaan
Fungsi FET: Tidak berkenaan
Konfigurasi: Tidak berkenaan
VCBO: -80V
VCEO: -80V
VEBO: -5V
IC: -1.5A
IB: -0.5A
Ptot: 12.5W
Tj: 150℃
Tstg: -55~150℃
Unit Jualan | : | Piece/Pieces |
Jenis Pakej | : | 1. Pembungkusan anti-elektrostatik 2. Kotak Karton 3. Braid |
Muat turun | : |
Transistor Silicon PNP
YZPST-BD140-16
TO-126 BD140-16 adalah transistor PNP Silicon Epitaxial PNP jenis NPN adalah BD139-16
Penerangan
BD140-16 adalah transistor PNP planar epitaxial silikon
Dalam pakej plastik JEDEC TO-126, yang direka untuk audio
penguat dan pemandu menggunakan pelengkap atau kuasi
Litar Komputer.
Jenis NPN pelengkap adalah BD139-16
Penilaian maksimum mutlak ( TA = 25 o c)
Parameter |
Symbol |
Value |
Unit |
Collector-Base Voltage |
VCBO |
-80 |
V |
Collector-Emitter Voltage |
VCEO |
-80 |
V |
Emitter-Base Voltage |
VEBO |
-5.0 |
V |
Collector Current |
IC |
-1.5 |
A |
Base Current |
IB |
-0.5 |
A |
Total Dissipation at |
Ptot |
12.5 |
W |
Max. Operating Junction Temperature |
Tj |
150 |
oC |
Storage Temperature |
Tstg |
-55~150 |
oC |
Ciri -ciri elektrik (TA = 25 o c)
Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
Collector Cut-off Current | ICBO | VCB = -80V, IE = 0 | -10 | μA | ||
— | — | |||||
Emitter Cut-off Current | IEBO | |||||
VEB = -5.0V, IC = 0 | -10 | μA | ||||
VCEO | ||||||
Collector-Emitter Sustaining Voltage | IC = -1.0mA, IB = 0 | -80 | — | — | V | |
VCE = -2.0V, IC = -0.15A | 100 | 250 | ||||
DC Current Gain | hFE | |||||
VCE = -2.0V, IC = -0.5A | 100 | — | — | |||
VCE(sat) | ||||||
Collector-Emitter Saturation Voltage | IC = -0.5A, IB = -0.05A | -0.5 | V | |||
VBE | ||||||
Base-Emitter Voltage | IC = -0.5A, VCE = -2.0V | -1 | V | |||
fT | ||||||
Transition Frequency | VCE = -5.0V,IC = -50mA | 80 | MHz |
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