650V 100A Trench Field-Stop Technology IGBT
$4.5100-999 Piece/Pieces
$3.5≥1000Piece/Pieces
Jenis bayaran: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
$4.5100-999 Piece/Pieces
$3.5≥1000Piece/Pieces
Jenis bayaran: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Model No.: YZPST-D100H065AT1S3
Tempat Asal: China
VCES: 650V
VGES: ±20V
VCEsat, Tvj=25: 1.75V
IC(TC=100℃ ): 100A
ICM: 200A
Tvjmax: 175 ℃
Package: TO247-3L
IC(TC=25℃): 125A
Unit Jualan | : | Piece/Pieces |
Jenis Pakej | : | 1. Pembungkusan anti-elektrostatik 2. Kotak Karton 3. Braid |
Muat turun | : |
Parit Teknologi Henti Teknologi IGBT
YZPST-D100H065AT1S3
ciri-ciri
650V, 100A
VCE (SAT) (typ.) =1.75v@vge=15V, IC = 100A
Suhu simpang maksimum 175
Penyaduran plumbum bebas PB; Mematuhi ROHS
Aplikasi
Penukar solar
Bekalan kuasa yang tidak terganggu
Penukar kimpalan
Penukar frekuensi beralih jarak tinggi hingga tinggi
Kunci Prestasi dan P ckage Parameter
Order codes |
VCE |
IC |
VCEsat, Tvj=25 |
Tvjmax |
Marking |
Package |
D100H065AT1S3 |
650V |
100A |
1.75V |
175 ℃ |
D100H65AT1 |
TO247-3L |
Maksimum mutlak Penilaian
Symbol | Parameter | Value | Unit |
VCES | Collector-Emitter Voltage | 650 | V |
VGES | Gate-Emitter Voltage | ±20 | V |
IC | Continuous Collector Current (TC=25 ℃ ) | 125 | A |
Continuous Collector Current (TC=100 ℃ ) | 100 | A | |
ICM | Pulsed Collector Current (Note 1) | 200 | A |
Diode Forward Current (TC=25 ℃ ) | 125 | A | |
IF | Diode Forward Current (TC=100 ℃ ) | 100 | A |
Maximum Power Dissipation (TC=25 ℃ ) | 385 | W | |
PD | Maximum Power Dissipation (TC=100 ℃ ) | 192 | W |
TJ | Operating Junction Temperature Range | -40 to 175 | ℃ |
TSTG | Storage Temperature Range | -55 to 150 | ℃ |
Elektrik Ciri -ciri (TC = 25 melainkan dinyatakan sebaliknya.)
Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
BVCES | Collector-Emitter | VGE=0V, IC=200uA | 650 | V | ||
Breakdown Voltage | --- | --- | ||||
ICES | Collector-Emitter Leakage Current | VCE=650V, VGE=0V | 1 | mA | ||
--- | --- | |||||
Gate Leakage Current, Forward | VGE=20V, VCE=0V | 600 | nA | |||
--- | --- | |||||
IGES | Gate Leakage Current, Reverse | VGE=-20V, VCE=0V | 600 | nA | ||
--- | --- | |||||
VGE(th) | Gate Threshold Voltage | VGE=VCE , IC=750uA | 4.2 | --- | 6 | V |
VCE(sat) | Collector-Emitter | VGE=15V, IC=100A, Tj=25 ℃ | --- | 1.75 | 2.2 | V |
Saturation Voltage | VGE=15V, IC=100A, Tj=125 ℃ | --- | 2.05 | --- | V | |
td(on) | Turn-on Delay Time | --- | 35 | --- | ns | |
tr | Turn-on Rise Time | VCC=400V | --- | 155 | --- | ns |
td(off) | Turn-off Delay Time | VGE=±15V | --- | 188 | --- | ns |
tf | Turn-off Fall Time | IC=100A | --- | 69 | --- | ns |
Eon | Turn-on Switching Loss | RG=8 | --- | 4.35 | --- | mJ |
Eoff | Turn-off Switching Loss | Inductive Load | --- | 1.11 | --- | mJ |
Ets | Total Switching Loss | TC=25 ℃ | --- | 5.46 | --- | mJ |
Cies | Input Capacitance | VCE=25V | --- | 7435 | --- | pF |
Coes | Output Capacitance | VGE=0V | --- | 237 | --- | pF |
Cres | Reverse Transfer | f =1MHz | 128 | pF | ||
Capacitance | --- | --- |
Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
IF=100A, Tj=25 ℃ | --- | 1.65 | 2.2 | V | ||
VF | Diode Forward Voltage | IF=100A, Tj=150 ℃ | --- | 1.4 | --- | V |
trr | Diode Reverse Recovery Time | 201 | ns | |||
VR=400V | --- | --- | ||||
IF=100A | ||||||
Irr | Diode peak Reverse | dIF/dt=200A/us | 19 | A | ||
Recovery Current | TC=25 ℃ | --- | --- | |||
Qrr | Diode Reverse Recovery Charge | 2.45 | uC | |||
--- | --- |
Nota1 Penarafan berulang, lebar nadi terhad oleh suhu persimpangan maksimum
Maklumat pakej
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