Tujuan umum transistor kuasa voltan rendah BD139

Tujuan umum transistor kuasa voltan rendah BD139

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Penerangan produk

Atribut Produk

Penerangan produk

Atribut Produk

Model No.: YZPST-BD139

Jenama: YZPST

Penerangan produk

Transistor voltan rendah pelengkap

YZPST-BD139

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■ Produk yang dipilih dalam keuntungan arus DC

Permohonan

■ Tujuan umum

Penerangan

Transistor planar epitaxial ini dipasang dalam pakej plastik SOT-32. Ia direka bentuk untuk penguat dan pemacu audio menggunakan litar pelengkap atau quasi-pelengkap. Jenis NPN adalah BD135 dan BD139, dan jenis PNP pelengkap adalah BD136 dan BD140.

T a b le 1 . D e v i c e s ummary

Order codes	Marking	Package	Packaging
BD135	BD135	SOT-32	Tube
BD135-16	BD135-16
BD136	BD136
BD136-16	BD136-16
BD139	BD139
BD139-10	BD139-10
BD139-16	BD139-16
BD140	BD140
BD140-10	BD140-10
BD140-16	BD140-16

T a b le 2. Penarafan maksimum mutlak

Symbol	Parameter	Value				Unit
		NPN		PNP
		BD135	BD139	BD136	BD140
VCBO	Collector-base voltage (IE = 0)	45	80	-45	-80	V
VCEO	Collector-emitter voltage (IB = 0)	45	80	-45	-80	V
VEBO	Emitter-base voltage (IC = 0)	5		-5		V
IC	Collector current	1.5		-1.5		A
ICM	Collector peak current	3		-3		A
IB	Base current	0.5		-0.5		A
PTOT	Total dissipation at Tc ≤ 25 °C	12.5				W
PTOT	Total dissipation at Tamb ≤ 25 °C	1.25				W
Tstg	Storage temperature	-65 to 150				°C
Tj	Max. operating junction temperature	150				°C

T a b le 3. Data terma

Symbol	Parameter	Max value	Unit
Rthj-case	Thermal resistance junction-case	10	°C/W
Rthj-amb	Thermal resistance junction-ambient	100	°C/W

Symbol	Parameter	Polarity	Test conditions	Value			Unit
Symbol	Parameter	Polarity	Test conditions	Min.	Typ.	Max.	Unit
ICBO	Collector cut-off current (I =0)	NPN	VCB = 30 V VCB = 30 V, TC = 125 °C			0.1 10	µA µA
ICBO	Collector cut-off current (I =0)	PNP	VCB = -30 V VCB = -30 V, TC = 125 °C			-0.1 -10	µA µA
IEBO	Emitter cut-off current (I =0)	NPN	VEB = 5 V			10	µA
IEBO	Emitter cut-off current (I =0)	PNP	VEB = -5 V			-10	µA
VCEO(sus)(1)	Collector-emitter sustaining voltage (IB=0)	NPN	IC = 30 mA BD135 BD139	45 80			V V
VCEO(sus)(1)	Collector-emitter sustaining voltage (IB=0)	PNP	IC = -30 mA BD136 BD140	-45 -80			V V
VCE(sat) (1)	Collector-emitter saturation voltage	NPN	IC = 0.5 A, IB = 0.05 A			0.5	V
VCE(sat) (1)	Collector-emitter saturation voltage	PNP	IC = -0.5 A, IB = -0.05 A			-0.5	V
VBE (1)	Base-emitter voltage	NPN	IC = 0.5 A, VCE = 2 V			1	V
VBE (1)	Base-emitter voltage	PNP	IC = -0.5 A, VCE = -2 V			-1	V
hFE (1)	DC current gain	NPN	IC = 5 mA, VCE = 2 V IC = 150 mA, VCE = 2 V IC = 0.5 A, VCE = 2 V	25 40 25		250
hFE (1)	DC current gain	PNP	IC = -5 mA, VCE = -2 V IC = -150 mA, VCE = -2 V IC = -0.5 A, VCE = -2 V	25 40 25		250
hFE (1)	hFE groups	NPN	IC = 150 mA, VCE = 2 V BD139-10 BD135-16/BD139-16	63 100		160 250
hFE (1)	hFE groups	PNP	IC = -150 mA, VCE = -2 V BD140-10 BD136-16/BD140-16	63 100		160 250

T a b le 4. Menghidupkan / mematikan negeri

Symbol	Parameter	Polarity	Test conditions	Value			Unit
Symbol	Parameter	Polarity	Test conditions	Min.	Typ.	Max.	Unit
ICBO	Collector cut-off current (I =0)	NPN	VCB = 30 V VCB = 30 V, TC = 125 °C			0.1 10	µA µA
ICBO	Collector cut-off current (I =0)	PNP	VCB = -30 V VCB = -30 V, TC = 125 °C			-0.1 -10	µA µA
IEBO	Emitter cut-off current (I =0)	NPN	VEB = 5 V			10	µA
IEBO	Emitter cut-off current (I =0)	PNP	VEB = -5 V			-10	µA
VCEO(sus)(1)	Collector-emitter sustaining voltage (IB=0)	NPN	IC = 30 mA BD135 BD139	45 80			V V
VCEO(sus)(1)	Collector-emitter sustaining voltage (IB=0)	PNP	IC = -30 mA BD136 BD140	-45 -80			V V
VCE(sat) (1)	Collector-emitter saturation voltage	NPN	IC = 0.5 A, IB = 0.05 A			0.5	V
VCE(sat) (1)	Collector-emitter saturation voltage	PNP	IC = -0.5 A, IB = -0.05 A			-0.5	V
VBE (1)	Base-emitter voltage	NPN	IC = 0.5 A, VCE = 2 V			1	V
VBE (1)	Base-emitter voltage	PNP	IC = -0.5 A, VCE = -2 V			-1	V
hFE (1)	DC current gain	NPN	IC = 5 mA, VCE = 2 V IC = 150 mA, VCE = 2 V IC = 0.5 A, VCE = 2 V	25 40 25		250
hFE (1)	DC current gain	PNP	IC = -5 mA, VCE = -2 V IC = -150 mA, VCE = -2 V IC = -0.5 A, VCE = -2 V	25 40 25		250
hFE (1)	hFE groups	NPN	IC = 150 mA, VCE = 2 V BD139-10 BD135-16/BD139-16	63 100		160 250
hFE (1)	hFE groups	PNP	IC = -150 mA, VCE = -2 V BD140-10 BD136-16/BD140-16	63 100		160 250