DCR1020SF60 High Power Thyristor 6000V

$120≥20Piece/Pieces

Jenis bayaran:	L/C,T/T,Paypal
Incoterm:	FOB,CFR,CIF
Pesanan minimum:	20 Piece/Pieces
Pengangkutan:	Ocean,Air
Port:	Shanghai

Hubungi sekarang

Penerangan produk

Atribut Produk

Pembungkusan & Penghantaran

Penerangan produk

Atribut Produk

Model No.: YZPST-DCR1020SF60

Jenama: YZPST

Pembungkusan & Penghantaran

Unit Jualan	:	Piece/Pieces
Jenis Pakej	:	1. Pembungkusan anti-elektrostatik 2. Kotak kadbod 3. Pembungkusan plastik pelindung

Penerangan produk

Kawalan Kuasa Thyristors

YZPST-DCR1020SF60

Ciri-ciri:

. Semua Struktur Tersebar

. Pusat Mengubah Konfigurasi Pintu

. Menyekat capabilty sehingga 4200 volt

. Masa pusingan maksimum dijamin

. Tinggi dV / dt Keupayaan

. Tekanan Dipasang Alat

KARAKTERISTIK DAN KADAR ELEKTRIK

Menyekat - Mati Negeri

VRRM (1)	VDRM (1)	VRSM (1)
6000~6500	6000~6500	6100~6600

V _RRM = Voltan terbalik puncak berulang

V _DRM = Pusingan balik voltan negeri berulang

V _RSM = Voltan terbalik puncak berulang-ulang (2)

Repetitive peak reverse leakage and off state leakage

I_{RRM
/}I_DRM

25 mA

150 mA (3)

Critical rate of voltage rise

dV/dt (4)

1000 V/msec

Nota:

Semua penilaian ditetapkan untuk Tj = 25 oC kecuali

dinyatakan sebaliknya.

(1) Semua penilaian voltan ditentukan untuk digunakan

Gelombang sinusoidal 50Hz / 60zHz ke atas

julat suhu -40 hingga +125 oC.

(2) 10 msec. maks. lebar nadi

(3) Nilai maksimum untuk Tj = 125 oC.

(4) Nilai minimum untuk linear dan eksponen

waveshape hingga 80% undian VDRM. Pintu dibuka.

Tj = 125 oC.

(5) Nilai tidak berulang.

(6) Nilai di / dt ditubuhkan mengikut

dengan EIA / NIMA Standard RS-397, Seksyen

5-2-2-6. Nilai yang ditakrifkan akan ditambah-

kepada yang diperolehi daripada litar snubber,

terdiri daripada kapasitor 0.2 F dan 20 ohm

rintangan selari dengan thristor di bawah

ujian.

Menjalankan - pada keadaan

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Average value of on-state current	I_T(AV)		640		A	Sinewave,180^o conduction,T_c=60^oC
RMS value of on-state current	I_TRMS		1005		A	Nominal value
Peak one cPSTCle surge (non repetitive) current	I_TSM		- 8.5		KA KA	8.3 msec (60Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC 10.0 msec (50Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC
I square t	I²t		0.36x10⁶		A²s	8.3 msec and 10.0 msec
Latching current	I_L		600		mA	V_D = 24 V; R_L= 12 ohms
Holding current	I_H		200		mA	V_{D =} 24 V; I =2.5 A
Peak on-state voltage	V_TM		3.6		V	I_TM = 1800 A; Duty cPSTCle £ 0.01%; T_j = 25 ^oC
Critical rate of rise of on-state current (5, 6)	di/dt		-		A/ms	Switching from V_DRM £ 1000 V, non-repetitive
Critical rate of rise of on-state current (6)	di/dt		100		A/ms	Switching from V_DRM £ 1000 V

KARAKTERISTIK DAN KADAR ELEKTRIK

Gating

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Peak gate power dissipation	P_GM		150		W	t_p= 40 us
Average gate power dissipation	P_G(AV)		5		W
Peak gate current	I_GM		-		A
Gate current required to trigger all units	I_GT		- 300 -		mA mA mA	V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC V_D = 6 V;R_L = 3 ohms;T_j = +25 ^oC V_D = 6 V;R_L = 3 ohms;T_j = +125^oC
Gate voltage required to trigger all units	V_GT		- 3.0 -		V V V	V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC V_D = 6 V;R_L = 3 ohms;T_j = 0-125^oC V_D = Rated V_DRM; R_L = 1000 ohms; T_j = + 125 ^oC
Peak negative voltage	V_GRM		5		V

Dinamik

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Delay time	t_d		-	0.5	ms	I_TM =50 A; V_D = Rated V_DRM Gate pulse: V_G = 20 V; R_G = 20 ohms; t_r = 0.1 ms; t_p = 20 ms
Turn-off time (with V_R = -50 V)	t_q		-	600	ms	I_TM =1000 A; di/dt =25 A/ms; V_R ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% V_DRM; V_G = 0; T_j = 125 ^oC; Duty cPSTCle ³ 0.01%
Reverse recovery charge	Q_rr		*		mC	I_TM =1000 A; di/dt =25 A/ms; V_R ³ -50 V

* Untuk jaminan maksima. nilai, kilang kenalan.

KARAKTERISTIK DAN PENINGKATAN MESIN DAN MEKANIKAL

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Operating temperature	T_j	-40	+125		^oC
Storage temperature	T_stg	-40	+125		^oC
Thermal resistance - junction to case	R_Q_(j-c)		0.022 0.052		^oC/W	Double sided cooled Single sided cooled
Thermal resistamce - case to sink	R_Q_(c-s)		0.004 0.008		^oC/W	Double sided cooled * Single sided cooled *
Thermal resistamce - junction to sink	R_Q₍_j_-s)		- -		^oC/W	Double sided cooled * Single sided cooled *
Mounting force	P	18	22		kN
Weight	W			-	g