YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Rumah> Produk-produk> Peranti cakera semikonduktor (jenis kapsul)> Fasa Kawalan Thyristor.> Peranti Tekanan Berkumpul Kuasa Tinggi thyristor 4500V
Peranti Tekanan Berkumpul Kuasa Tinggi thyristor 4500V
Peranti Tekanan Berkumpul Kuasa Tinggi thyristor 4500V
Peranti Tekanan Berkumpul Kuasa Tinggi thyristor 4500V
Peranti Tekanan Berkumpul Kuasa Tinggi thyristor 4500V
Peranti Tekanan Berkumpul Kuasa Tinggi thyristor 4500V
Peranti Tekanan Berkumpul Kuasa Tinggi thyristor 4500V

Peranti Tekanan Berkumpul Kuasa Tinggi thyristor 4500V

$4101-9 Piece/Pieces

$310≥10Piece/Pieces

Jenis bayaran:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
Pesanan minimum:1 Piece/Pieces
Pengangkutan:Ocean,Air
Port:SHANGHAI
Atribut Produk

Model No.YZPST-R3708FC45V

JenamaYZPST

Pembungkusan & Penghantaran
Unit Jualan : Piece/Pieces
Jenis Pakej : 1. Pembungkusan anti-elektrostatik 2. Kotak kadbod 3. Pembungkusan pelindung plastik
私域 R3708FC45V 截取 视频 15 秒 1-1.88mb.mp4
Penerangan produk

THYRISTOR DAYA TINGGI UNTUK APLIKASI PENGENDALIAN FASA

YZPST-R3708FC45V

Ciri-ciri:

. Semua Struktur Tersebar

. Konfigurasi Gerbang Penguat Linear

. Menyekat keupayaan hingga 4500 volt

. Masa Mati Maksimum Dijamin

. Keupayaan dV / dt tinggi

. Peranti Berkumpul Tekanan

Sekatan - Keadaan Mati



Device Type

VRRM (1)

VDRM (1)

VRSM (1)

R3708FC45

4500

4500

4600


V RRM = Voltan terbalik puncak berulang


V DRM


= Re p etiti v e p eak o ff state vo lta g e

V RSM = N o n re p etiti v e p eak re v erse vo lta g e ( 2 )

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

200 mA (3)

Critical rate of voltage rise

dV/dt (4)

200 Vsec

Menjalankan - pada keadaan


bentuk gelombang ke 80% dinilai V DRM . Pintu gerbang buka. Tj = 125 o C.

(5) Tidak berulang nilai.

(6) The nilai daripada di / dt ditubuhkan dalam sesuai dengan EIA / NIMA Piawai RS-397, Bahagian

5-2-2-6. T h e nilai ditakrifkan akan menjadi dalam penambahan ke itu diperoleh dari a penghidup litar, co m p meningkat a 0.2 μ F kapasitor dan 20 oh m s rintangan dalam selari dengan yang thristor dalam ujian.


Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

 

3708

 

A

Sinewave,180o conduction,TS=55oC

RMS value of on-state current

ITRMS

 

7364

 

A

TS=25oC

Peak one cpstcle surge

(non repetitive) current

 

ITSM

 

50000

 

A

10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC

I square t

I2t

 

12.5x106

 

A2s

10.0 msec

Latching current

IL

 

 

1000

 

mA

VD = 12 V; RL= 12 ohms

Holding current

IH

 

 

450

 

mA

VD = 12 V; I = 2.5 A

Peak on-state voltage

VTM

 

 

2.1

 

V

ITM = 4000 A; Duty cpstcle 0.01% Tj = 125 oC

Critical rate of rise of on-state current (5, 6)

di/dt

 

 

250

 

A/μs

Switching from VDRM 1000 V, non-repetitive

Critical rate of rise of on-state current (6)

di/dt

 

 

100

 

A/μs

Switching from VDRM 1000 V

ELEKTRIK KARAKTERISTIK DAN PERINGKAT R3708FC45 - Po w er Th ristor y

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

200

 

W

tp = 40 us

Average gate power dissipation

PG(AV)

 

5

 

W

 

Peak gate current

IGM

 

15

 

A

 

Gate current required to trigger all units

IGT

 

30

300

200

125

 

mA mA mA

VD = 12V;RL = 6 ohms;Tj = -40 oC VD = 12V;RL = 6 ohms;Tj = +25 oC VD = 12V;RL = 6 ohms;Tj = +125oC

Gate voltage required to trigger all units

VGT

 

0.30

5

3

 

V V V

VD = 12 V;RL = 6 ohms;Tj = -40 oC VD = 12V;RL = 6 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC

Peak negative voltage

VGRM

 

15

 

V

 

D y namik

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

 

 

2.5

μs

ITM = 50 A; VD = 1500 V

Gate pulse: VG = 20 V; RG = 20 ohms;

tr = 0.1 μs; tp = 20 μs

Turn-off time (with VR = -50 V)

tq

 

 

250

μs

ITM =4000 A; di/dt = 60 As;

VR =100 V; Re-applied dV/dt = 20

V/μs linear to 67% VDRM; VG = 0; Tj = 125 oC; Tp=2000us

Reverse recovery current

Irr

 

 

 

A

ITM =4000 A; di/dt = 60 As; VR =100 V


TERMA DAN MEKANIKAL KARAKTERISTIK DAN PERINGKAT

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

 

oC

 

Storage temperature

Tstg

-40

+140

 

oC

 

Thermal resistance - junction to sink

RΘ (j-s)

 

0.0075

0.0150

 

o

C/W

Double sided cooled

Single sided cooled

Mounting force

P

98

113

 

kN

 

Weight

W

 

 

2.7

Kg.

 

* Pemasangan permukaan s m Ooth, rata dan berminyak

C458pb Thyristor

Sym

A

B

C

E

Inches

3.9 3

5.90

5.15

1.37

mm

100

150

131

35±1.0



Rumah> Produk-produk> Peranti cakera semikonduktor (jenis kapsul)> Fasa Kawalan Thyristor.> Peranti Tekanan Berkumpul Kuasa Tinggi thyristor 4500V
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