3 produk kuadran terutamanya disyorkan BTA26 Serie 26A 800CW Triacs
$0.711000-9999 Piece/Pieces
$0.56≥10000Piece/Pieces
Jenis bayaran: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Pengangkutan: | Ocean,Land,Others |
Port: | SHANGHAI |
$0.711000-9999 Piece/Pieces
$0.56≥10000Piece/Pieces
Jenis bayaran: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Pengangkutan: | Ocean,Land,Others |
Port: | SHANGHAI |
Model No.: YZPST-BTA26-800CW
Jenama: YZPST
Tempat Asal: China
IT(RMS): 26A
VDRM: 800V
VRRM: 800V
VTM: ≤1.5V
Tstg: -40~150℃
Tj: -40~125℃
ITSM: 260A
I2t: 350A2s
Unit Jualan | : | Piece/Pieces |
Jenis Pakej | : | 1. Pembungkusan anti-elektrostatik 2. Kotak Karton 3. Braid |
Muat turun | : |
BTA26/BTB26Series 26A Triacs
3 produk kuadran terutamanya disyorkan BTA26 Serie 26A 800CW Triacs
Penerangan:Dengan keupayaan yang tinggi untuk menahan pemuatan kejutan arus besar, triacs siri BTA26/BTB26 menyediakan kadar DV/DT yang tinggi dengan rintangan yang kuat terhadap antara muka elektromagnet. Dengan persembahan komutasi yang tinggi, 3 produk kuadran terutamanya disyorkan untuk digunakan pada beban induktif. Dari ketiga -tiga terminal ke heatsink luaran, BTA26 menyediakan voltan penebat yang dinilai sebanyak 2500 VRM yang mematuhi piawaian UL
Jenama YZPST TO-3PA BTA26-800B 800V TRIAC
CIRI-CIRI UTAMA:
symbol |
value |
unit |
IT(RMS) |
26 |
A |
VDRM/VRRM |
600/800/1200/1600 |
V |
VTM |
≤1.5 |
V |
Penilaian maksimum mutlak:
Parameter |
Symbol |
Value |
Unit |
Storage junction temperature range |
Tstg |
-40~150 |
℃ |
Operating junction temperature range |
Tj |
-40~125 |
℃ |
Repetitive peak off-state voltage (Tj=25℃) |
VDRM |
600/800/1200/1600 |
V |
Repetitive peak reverse voltage (Tj=25℃) |
VRRM |
600/800/1200/1600 |
V |
RMS on-state current |
IT(RMS) |
26 |
A |
Non repetitive surge peak on-state current (full cycle, F=50Hz) |
ITSM |
260 |
A |
I2t value for fusing (tp=10ms) |
I2t |
350 |
A2s |
Critical rate of rise of on-state current(IG=2 × IGT) |
dI/dt |
50 |
A/ μs |
Peak gate current |
IGM |
4 |
A |
Average gate power dissipation |
PG(AV) |
1 |
W |
Peak gate power |
PGM |
10 |
W |
Ciri -ciri elektrik (TJ = 25 ℃ melainkan dinyatakan sebaliknya)
3 kuadran :
Parameter | Value | |||||
Test Condition | Quadrant | CW | BW | Unit | ||
IGT | VD=12V, | 35 | 50 | mA | ||
VGT | RL=33Ω | Ⅰ- Ⅱ-Ⅲ | MAX | 1.3 | V | |
VGD | VD=VDRM | Ⅰ- Ⅱ-Ⅲ | MIN | 0.2 | V | |
IH | IT=100mA | MAX | 60 | 80 | mA | |
Ⅰ-Ⅲ | 70 | 90 | ||||
IL | IG=1.2IGT | Ⅱ | MAX | 80 | 100 | mA |
VD=2/3VDRM Tj=125℃ Gate open | ||||||
dV/dt | MIN | 1000 | 1500 | V/ µs |
4 kuadran :
Parameter | Value | |||||
Test Condition | Quadrant | C | B | Unit | ||
Ⅰ- Ⅱ-Ⅲ | 25 | 50 | mA | |||
IGT | VD=12V, | Ⅳ | 50 | 70 | mA | |
VGT | RL=33Ω | ALL | MAX | 1.5 | V | |
VGD | VD=VDRM | ALL | MIN | 0.2 | V | |
IH | IT=100mA | MAX | 60 | 75 | mA | |
Ⅰ-Ⅲ- Ⅳ | 70 | 80 | ||||
IL | IG=1.2IGT | Ⅱ | MAX | 90 | 100 | mA |
VD=2/3VDRM Tj=125℃ Gate open | ||||||
dV/dt | MIN | 200 | 500 | V/ µs |
Ciri -ciri statik
Symbol | Test Condition | Value | Unit | ||
VTM | ITM=35A tp=380μs | Tj=25℃ | MAX | 1.5 | V |
IDRM | Tj=25℃ | 10 | µA | ||
IRRM | VDRM= VRRM | Tj= 125℃ | MAX | 3 | mA |
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.