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| Port: | SHANGHAI |
Model No.: YZPST-STC2326
Jenama: YZPST
B TA30 Siri Triacs
YZPST-STC2326
DESKRIPSI
STC2326 adalah mod peningkatan kuasa logik N-Channel transistor kesan kuasa medan yang dihasilkan menggunakan teknologi tren parit DMOS ketumpatan super yang tinggi. STC2326 telah direka khusus untuk meningkatkan kecekapan keseluruhan penukar DC / DC yang menggunakan pengawal PWM beralih segerak atau konvensional. Ia telah dioptimumkan untuk caj pintu rendah, RDS rendah (ON) dan kelajuan pensuisan pantas.
APLIKASI
Sistem Powered
DC / DC Converter
Suis Beban
CIRI-CIRI
110V / 3A, RDS (ON) = 310mΩ @ VGS = 10V
Reka bentuk sel ketumpatan tinggi untuk RDS yang sangat rendah (ON)
Keupayaan rintangan luar biasa dan keupayaan maksimum DC semasa
Reka bentuk pakej SOT-23-6L
PIN CONFIGURATION (SOT-23-6L)
|
Pin |
Symbol |
Description |
|
1 |
D |
Drain |
|
2 |
D |
Drain |
|
3 |
G |
Gate |
|
4 |
S |
Source |
|
5 |
D |
Drain |
|
6 |
D |
Drain |
O RDER ING DALAM F O R M A T I O N
|
Part Number |
Package |
Part Marking |
|
SPN2326S26RGB |
SOT-23-6L |
26YW |
A B SOU L T E MA X I M U M R A T DI G S ( T A = 25 ℃ U n l e s s o t h e r w i s e n o t d d )
|
Parameter |
Symbol |
Typical |
Unit |
|
|
Drain-Source Voltage |
VDSS |
110 |
V |
|
|
Gate –Source Voltage |
VGSS |
±20 |
V |
|
|
Continuous Drain Current(TJ=150℃) |
TA=25℃ |
ID |
3.0 |
A |
|
TA=70℃ |
2.0 |
|||
|
Pulsed Drain Current |
IDM |
10 |
A |
|
|
Power Dissipation |
TA=25℃ |
PD |
2.0 |
W |
|
TA=70℃ |
1.3 |
|||
|
Operating Junction Temperature |
TJ |
-55/150 |
℃ |
|
|
Storage Temperature Range |
TSTG |
-55/150 |
℃ |
|
|
Thermal Resistance-Junction to Ambient |
RθJA |
62.5 |
℃/W |
|
|
Parameter |
Symbol |
Conditions |
Min. |
Typ |
Max. |
Unit |
|
Static |
||||||
|
Drain-Source Breakdown Voltage |
V(BR)DSS |
VGS=0V,ID=250uA |
110 |
|
|
V |
|
Gate Threshold Voltage |
VGS(th) |
VDS=VGS,ID=250uA |
1 |
2.0 |
2.5 |
|
|
Gate Leakage Current |
IGSS |
VDS=0V,VGS=±20V |
|
|
±100 |
nA |
|
Zero Gate Voltage Drain Current |
IDSS |
VDS=80V,VGS=0V |
|
|
1 |
uA |
|
VDS=80V,VGS=0V TJ=125℃ |
|
|
5 |
|||
|
On-State Drain Current |
ID(on) |
VDS≥5V,VGS =10V |
3.0 |
|
|
A |
|
Drain-Source On-Resistance |
RDS(on) |
VGS= 10V,ID=3A |
|
0.26 |
0.31 |
Ω |
|
Forward Transconductance |
gfs |
VDS=10V,ID=3A |
|
2.4 |
|
S |
|
Diode Forward Voltage |
VSD |
IS=1A,VGS =0V |
|
|
1.2 |
V |
|
Dynamic |
||||||
|
Total Gate Charge |
Qg |
VDS=80V,VGS=10V ID= 5A |
|
9 |
13 |
nC |
|
Gate-Source Charge |
Qgs |
|
2 |
|
||
|
Gate-Drain Charge |
Qgd |
|
1.4 |
|
||
|
Input Capacitance |
Ciss |
VDS=25,VGS=0V f=1MHz |
|
508 |
|
pF |
|
Output Capacitance |
Coss |
|
29 |
|
||
|
Reverse Transfer Capacitance |
Crss |
|
16.5 |
|
||
|
Turn-On Time |
td(on) |
VDD=50V,RL=10Ω ID=3A,VGEN=10V RG=3.3Ω |
|
2 |
|
nS |
|
tr |
|
21.5 |
|
|||
|
Turn-Off Time |
td(off) |
|
11.2 |
|
||
|
tf |
|
18.8 |
|
|||
Tel: 86-514-87782298
Whatsapp: +8613805278321
Alamat: 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu China
Laman web: https://ms.yzpst.com
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