YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Rumah> Produk-produk> Pakej plastik semikonduktor> Penyearah Kawalan Silicon (SCR)> NPN Silicon Power Transistors MJE2955T pelengkap ke MJE3055T
NPN Silicon Power Transistors MJE2955T pelengkap ke MJE3055T
NPN Silicon Power Transistors MJE2955T pelengkap ke MJE3055T
NPN Silicon Power Transistors MJE2955T pelengkap ke MJE3055T
NPN Silicon Power Transistors MJE2955T pelengkap ke MJE3055T
NPN Silicon Power Transistors MJE2955T pelengkap ke MJE3055T

NPN Silicon Power Transistors MJE2955T pelengkap ke MJE3055T

$0.122000-9999 Piece/Pieces

$0.08≥10000Piece/Pieces

Jenis bayaran:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
Pengangkutan:Ocean,Air
Port:SHANGHAI
Atribut Produk

Model No.YZPST-MJE2955T

JenamaYZPST

VCBO-70V

VCEO-60V

VEBO-5V

IC-10A

PTOT75W

Tj150℃

Tstg-55-150℃

Pembungkusan & Penghantaran
Unit Jualan : Piece/Pieces
Jenis Pakej : 1. Pembungkusan anti-elektrostatik 2. Kotak Karton 3. Pembungkusan Perlindungan Plastik
Muat turun :
YZPST-MJE2955T NPN Silicon Power Transistors MJE29
Penerangan produk


Transistor kuasa silikon PNP mje2955t

Desrkripsi:
MJE2955T adalah transistor PNP, yang melengkapi MJE3055T dan digunakan dalam penguatan kuasa audio dan litar penukaran kuasa.

Borang Pakej: ke-220

TO220 Silicon Power Transistors MJE2955T

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-70

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Continuous Collector Current

-10

A

PTOT

Total dissipation at Tcase=25 ℃

75

W

Tj

Junction Temperature

150

Tstg

Storage Temperature Range

-55-150




Ciri -ciri elektrik (TC = 25 ° C, melainkan sebaliknya ditentukan)

Symbol

Parameter

Test Condition

Value

Unit

Min

Type

Max

VCBO

Collector-Base Breakdown Voltage

IC= -10mA

-70

 

 

V

VCEO

Collector-Emitter Breakdown Voltage

IC= -200mA

-60

 

 

V

VEBO

Emitter-Base Breakdown Voltage

IE= -10mA

- 5

 

 

V

ICBO

Collector Cutoff Current

VCB= -70V

 

 

1

mA

IEBO

Emitter Cutoff Current

VEB= -5V

 

 

5

mA

hFE

DC Current Gain

IC= -4A,VCE= -4V

20

 

100

 

VCE(sat)

Collector-Base Breakdown Voltage

IC= -4A,IB= -0.4A

 

 

-1.1

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= -4A,IB= -4A

 

 

-1.8

V

fT

Transition Frequency

VCE=10V, IC=0.5A f=1MHZ

2

 

 

MHZ

aPulse Testtp ≤300usδ≤2%

Pakej mekanikal Data

MJE2955T Complementary to MJE3055T TO220


Rumah> Produk-produk> Pakej plastik semikonduktor> Penyearah Kawalan Silicon (SCR)> NPN Silicon Power Transistors MJE2955T pelengkap ke MJE3055T
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