YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Rumah> Produk-produk> Pakej plastik semikonduktor> Penyearah Kawalan Silicon (SCR)> NPN Silicon Power Transistors 13005D
NPN Silicon Power Transistors 13005D
NPN Silicon Power Transistors 13005D
NPN Silicon Power Transistors 13005D
NPN Silicon Power Transistors 13005D
NPN Silicon Power Transistors 13005D

NPN Silicon Power Transistors 13005D

$0.122000-9999 Piece/Pieces

$0.08≥10000Piece/Pieces

Jenis bayaran:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
Pengangkutan:Ocean,Air
Port:SHANGHAI
Atribut Produk

Model No.YZPST-13005D

JenamaYZPST

VCBO700V

VCEO400V

VEBO9V

IC3A

Icm6A

PTOT75W

Tj150℃

Tstg-55—150℃

Pembungkusan & Penghantaran
Unit Jualan : Piece/Pieces
Jenis Pakej : 1. Pembungkusan anti-elektrostatik 2. Kotak Karton 3. Pembungkusan Perlindungan Plastik
Muat turun :
Transistor kuasa silikon NPN YZPST-13005D
Penerangan produk

NPN Silicon Power Transistors 13005D
● Desrkripsi:
13005D adalah transistor NPN yang digunakan dalam ballast elektronik dan penjimatan tenaga elektronik. Ia mempunyai ciri -ciri kehilangan beralih rendah, kebolehpercayaan yang tinggi, ciri -ciri suhu tinggi yang baik, kelajuan penukaran yang sesuai, voltan kerosakan tinggi dan kebocoran terbalik yang rendah.

Silicon Power Transistors

● Penarafan Max I mutlak

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

700

V

VCEO

Collector-Emitter Voltage

400

V

VEBO

Emitter-Base Voltage

9

V

IC

Continuous Collector Current

3

A

Icm

Collector Pulse CurrentTp5ms

6

A

PTOT

 

Total dissipation at Tcase=25 ℃

TO-126SD

50

W

TO-220

75

Tj

Junction Temperature

150

Tstg

Storage Temperature Range

-55150

● Ciri -ciri elektrik (TC = 25 ° C, melainkan dinyatakan sebaliknya)

Symbol

Parameter

Test Condition

Value

Unit

Min

Type

Max

ICBO

Collector Cutoff Current

VCB= 700 VIE=0

 

 

0.1

mA

ICEO

Base Cutoff Current

VCE= 400 VIc=0

 

 

0.1

mA

IEBO

Emitter Cutoff Current

VEB= 9 VIC=0

 

 

0.1

mA

VCBO

Collector-Base Breakdown Voltage

IC= 0.1mA

700

 

 

V

VCEO

Collector-Emitter Breakdown Voltage

IC= 0.1mA

400

 

 

V

VEBO

Emitter-Base Breakdown Voltage

IB= 0.1mA

9

 

 

V

hFE

DC Current Gain

IC= 0.5A,VCE= 5V

15

 

35

 

a

VCE sat

Collector-Base Breakdown Voltage

IC= 2A,IB= 0.5A

 

 

1

V

a

VBE sat

Base-Emitter Saturation Voltage

IC= 2A,IB= 0.5A

 

 

1.5

V

ts

Storage Time

UI9600Ic=0.5A

2

 

7

us

fT

Transition Frequency

VCE=10VIC=0.2A F=1MHz

5

 

 

MHz

aPulse Testtp 300usδ≤2%

● Data mekanikal pakej

Silicon Power TransistorsNPN Silicon Power Transistors

苏ICP备05018286号-1
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