NPN Silicon Power Transistors 13005D
$0.122000-9999 Piece/Pieces
$0.08≥10000Piece/Pieces
Jenis bayaran: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Pengangkutan: | Ocean,Air |
Port: | SHANGHAI |
$0.122000-9999 Piece/Pieces
$0.08≥10000Piece/Pieces
Jenis bayaran: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Pengangkutan: | Ocean,Air |
Port: | SHANGHAI |
Model No.: YZPST-13005D
Jenama: YZPST
VCBO: 700V
VCEO: 400V
VEBO: 9V
IC: 3A
Icm: 6A
PTOT: 75W
Tj: 150℃
Tstg: -55—150℃
Unit Jualan | : | Piece/Pieces |
Jenis Pakej | : | 1. Pembungkusan anti-elektrostatik 2. Kotak Karton 3. Pembungkusan Perlindungan Plastik |
Muat turun | : |
NPN Silicon Power Transistors 13005D
● Desrkripsi:
13005D adalah transistor NPN yang digunakan dalam ballast elektronik dan penjimatan tenaga elektronik. Ia mempunyai ciri -ciri kehilangan beralih rendah, kebolehpercayaan yang tinggi, ciri -ciri suhu tinggi yang baik, kelajuan penukaran yang sesuai, voltan kerosakan tinggi dan kebocoran terbalik yang rendah.
● Penarafan Max I mutlak
Symbol |
Parameter |
Value |
Unit |
|
VCBO |
Collector-Base Voltage |
700 |
V |
|
VCEO |
Collector-Emitter Voltage |
400 |
V |
|
VEBO |
Emitter-Base Voltage |
9 |
V |
|
IC |
Continuous Collector Current |
3 |
A |
|
Icm |
Collector Pulse Current(Tp<5ms) |
6 |
A |
|
PTOT |
Total dissipation at Tcase=25 ℃ |
TO-126SD |
50 |
W |
TO-220 |
75 |
|||
Tj |
Junction Temperature |
150 |
℃ |
|
Tstg |
Storage Temperature Range |
-55—150 |
℃ |
Symbol |
Parameter |
Test Condition |
Value |
Unit |
||
Min |
Type |
Max |
||||
ICBO |
Collector Cutoff Current |
VCB= 700 V,IE=0 |
|
|
0.1 |
mA |
ICEO |
Base Cutoff Current |
VCE= 400 V,Ic=0 |
|
|
0.1 |
mA |
IEBO |
Emitter Cutoff Current |
VEB= 9 V,IC=0 |
|
|
0.1 |
mA |
VCBO |
Collector-Base Breakdown Voltage |
IC= 0.1mA |
700 |
|
|
V |
VCEO |
Collector-Emitter Breakdown Voltage |
IC= 0.1mA |
400 |
|
|
V |
VEBO |
Emitter-Base Breakdown Voltage |
IB= 0.1mA |
9 |
|
|
V |
hFE |
DC Current Gain |
IC= 0.5A,VCE= 5V |
15 |
|
35 |
|
a VCE sat |
Collector-Base Breakdown Voltage |
IC= 2A,IB= 0.5A |
|
|
1 |
V |
a VBE sat |
Base-Emitter Saturation Voltage |
IC= 2A,IB= 0.5A |
|
|
1.5 |
V |
ts |
Storage Time |
UI9600,Ic=0.5A |
2 |
|
7 |
us |
fT |
Transition Frequency |
VCE=10V,IC=0.2A F=1MHz |
5 |
|
|
MHz |
a:Pulse Test,tp ≤300us,δ≤2% |
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