$3650-499 Piece/Pieces
$32≥500Piece/Pieces
| Jenis bayaran: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
| Pengangkutan: | Ocean,Land |
| Port: | SHANGHAI |
Model No.: YZPST-M2A016120L
Jenama: YZPST
Tempat Asal: China
VDSmax: 1200V
VGSmax: -8/+22V
VGSop: -4/+18V
ID Tc=25℃: 115A
ID Tc=100℃: 76A
ID(pulse): 250A
PD: 582W
TJ, TSTG: -55 to +175℃
| Unit Jualan | : | Piece/Pieces |
| Muat turun | : |
|
N-channel sic power mosfet p/n: yzpst-m2a016120l sic mosfet
ciri-ciri
Voltan menyekat tinggi dengan rintangan rendah
Beralih berkelajuan tinggi dengan kapasitans yang rendah
Mudah untuk selari dan mudah memandu
Faedah
Kecekapan sistem yang lebih tinggi
Mengurangkan keperluan penyejukan
Peningkatan ketumpatan kuasa
Peningkatan kekerapan sistem penukaran sistem
Aplikasi
Tenaga yang boleh diperbaharui
Pengecas bateri EV
Penukar voltan tinggi DC/DC
Bekalan kuasa mod suis
Pakej
|
Part Number |
Package |
|
M2A016120L |
TO-247-4 |
Penilaian maksimum (t c = 25 ℃ tidak dinyatakan sebaliknya)
| Symbol | Parameter | Value | Unit | Test Conditions | Note |
| VDSmax | Drain-Source Voltage | 1200 | V | VGS=0V, ID=100μA | |
| VGSmax | Gate-Source Voltage | -8/+22 | V | Absolute maximum values | |
| VGSop | Gate-Source Voltage |
-4/+18 |
V | Recommended operational values | |
| ID | Continuous Drain Current | 115 | A | VGS=18V, Tc=25℃ | |
| 76 | VGS=18V, Tc=100℃ | ||||
| ID(pulse) | Pulsed Drain Current | 250 | A | Pulse width tp limited by TJmax | |
| PD | Power Dissipation | 582 | W | Tc=25℃, TJ=175℃ | |
| TJ, TSTG | Operating Junction and Storage Temperature | -55 to +175 | ℃ |
| Symbol | Parameter | Min. | Typ. | Max. | Unit | Test Conditions | Note |
| V(BR)DSS | Drain-Source Breakdown Voltage | 1200 | / | / | V | VGS=0V, ID=100μA | |
| VGS(th) | Gate Threshold Voltage | 1.9 | 2.6 | 4 | V | VDS=VGS, ID=23mA | |
| / | 1.8 | / | VDS=VGS, ID=23mA, TJ=175℃ | ||||
| IDSS | Zero Gate Voltage Drain Current | / | 1 | 100 | µA | VDS=1200V, VGS=0V | |
| IGSS+ | Gate-Source Leakage Current | / | 10 | 250 | nA | VDS=0V, VGS=22V | |
| IGSS- | Gate-Source Leakage Current | / | 10 | 250 | nA | VDS=0V, VGS=-8V | |
| RDS(on) | Drain-Source On-State Resistance | / | 16 | 21 | mΩ | VGS=18V, ID=75A | |
| / | 28 | / | VGS=18V, ID=75A, TJ=175℃ | ||||
| gfs | Transconductance | / | 40.5 | / | S | VDS=20V, ID=75A | |
| / | 37 | / | VDS=20V, ID=75A, TJ=175℃ | ||||
| Ciss | Input Capacitance | / | 4300 | / | VGS=0V | ||
| Coss | Output Capacitance | / | 236 | / | pF | VDS=1000V | |
| Crss | Reverse Transfer Capacitance | / | 35 | / | f=1MHz | ||
| Eoss | Coss Stored Energy | / | 136 | / | µJ | VAC=25mV | |
| EON | Turn-On Switching Energy | / | 2.1 | / | µJ | VDS=800V, VGS=-4V/18V | |
| EOFF | Turn-Off Switching Energy | / | 1.6 | / | ID=40A, RG(ext)=2.5Ω, L=100μH | ||
| td(on) | Turn-On Delay Time | / | 150 | / | |||
| tr | Rise Time | / | 38 | / | VDS=800V, VGS=-4V/18V, ID=40A RG(ext)=2.5Ω, RL=20Ω | ||
| td(off) | Turn-Off Delay Time | / | 108 | / | ns | ||
| tf | Fall Time | / | 35 | / | |||
| RG(int) | Internal Gate Resistance | / | 2.3 | / | Ω | f=1MHz, VAC=25mV | |
| QGS | Gate to Source Charge | / | 60 | / | VDS=800V | ||
| QGD | Gate to Drain Charge | / | 44 | / | nC | VGS=-4V/18V | |
| QG | Total Gate Charge | / | 242 | / | ID=40A |
Pakej Dimensi
Tel: 86-514-87782298
Whatsapp: +8613805278321
Alamat: 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu China
Laman web: https://ms.yzpst.com
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