YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Rumah> Produk-produk> Peranti modul semikonduktor> Modul Thyristor.> Satu skru pemasangan rendah kebocoran semasa 70A 1200V modul thyristor
Satu skru pemasangan rendah kebocoran semasa 70A 1200V modul thyristor
Satu skru pemasangan rendah kebocoran semasa 70A 1200V modul thyristor
Satu skru pemasangan rendah kebocoran semasa 70A 1200V modul thyristor
Satu skru pemasangan rendah kebocoran semasa 70A 1200V modul thyristor
Satu skru pemasangan rendah kebocoran semasa 70A 1200V modul thyristor
Satu skru pemasangan rendah kebocoran semasa 70A 1200V modul thyristor

Satu skru pemasangan rendah kebocoran semasa 70A 1200V modul thyristor

$10.560-999 Piece/Pieces

$6.5≥1000Piece/Pieces

Jenis bayaran:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
Pengangkutan:Ocean,Land,Others
Port:SHANGHAI
Atribut Produk

Model No.YZPST-SK70KQ12

JenamaYZPST

Tempat AsalChina

VRRM1200V

VDRM1200V

VRSM1300V

VDSM1300V

IRRM5mA

IDRM5mA

IT(AV)55A

IT(RMS)80A

Pembungkusan & Penghantaran
Unit Jualan : Piece/Pieces
Jenis Pakej : 1. Pembungkusan anti-elektrostatik 2. Kotak Karton 3. Braid
Muat turun :
Modul Thyristor SK70KQ12
Penerangan produk

YZPST-SK70KQ12


Modul 70A 1200 Thyristor

CIRI-CIRI PRODUK
Reka bentuk padat
Satu pemasangan skru
Pemindahan haba dan pengasingan melalui DBC
Cip thyristor kaca
Arus kebocoran rendah

Aplikasi
Permulaan yang lembut
Kawalan suhu
Kawalan cahaya
YZPST-SK70KQ12



Mutlak Maksimum Penilaian (TC = 25 ° C kecuali dinyatakan sebaliknya)

Symbol Parameter Test Conditions Values Unit
VRRM Maximum Repetitive Reverse Voltage Tvj=125 1200 V
VDRM Maximum repetitive peak off-state voltage
VRSM Non-Repetitive Reverse Voltage Tvj=125 V
VDSM Non-repetitive peak off-state voltage 1300
IRRM Maximum Repetitive Reverse Current Tvj=125 5 mA
IDRM Maximum repetitive peak off-state Current
IT(AV) Mean On-state Current TC=85 55
IT(RMS) RMS Current TC=85, sin180 80 A
ITSM Non Repetitive Surge Peak On-state Current 10ms, Tj=25 1100
I2t For Fusing 10ms, Tj=25 6050 A2S
VTM Peak on-state voltage ITM=150A 1.7 V
dv/dt critical rate of rise of off-state voltage VD=2/3VDRM   Gate Open Tj=125 1000 V/us
IGT gate trigger current     max. 80 mA
VGT gate trigger voltage     max. 1.5 V
IH gate trigger current 200 mA
IL latching current 500 mA
Viso AC   50Hz    RMS    1min 2500 V
TJ Junction Temperature -40 to +125
TSTG Storage Temperature Range -40 to +125
RthJC Junction to Case Thermal Resistance(Per thyristor chip ) 0.7  /W
Torque mounting force, Module to Sink 2.5 Nm
Tsolder Teminals,10s 260

Menggariskan

Outlines


Rumah> Produk-produk> Peranti modul semikonduktor> Modul Thyristor.> Satu skru pemasangan rendah kebocoran semasa 70A 1200V modul thyristor
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