MOSFET kuasa 800V N-Channel yang cepat
$5510-199 Piece/Pieces
$45≥200Piece/Pieces
Jenis bayaran: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Pengangkutan: | Ocean,Air |
Port: | SHANGHAI |
$5510-199 Piece/Pieces
$45≥200Piece/Pieces
Jenis bayaran: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Pengangkutan: | Ocean,Air |
Port: | SHANGHAI |
Model No.: YZPST-SP50N80FX
Jenama: YZPST
Jenis Bekalan: Pengilang asal, ODM, Agensi, Peruncit
Bahan Rujukan: Lembaran data, Foto
Konfigurasi: Array
Pecahan Semasa: Tidak berkenaan
Tahan Semasa (Ih) (maksimum): Tidak berkenaan
Keadaan Semasa (maksimum): Tidak berkenaan
Nombor SCR, Diod: Tidak berkenaan
Suhu Operasi: -55 ° C ~ 150 ° C (TJ)
Jenis SCR: Pemulihan Standard
Struktur: Tidak berkenaan
Voltan Dihidupkan: Tidak berkenaan
Pencetus Grid Voltan (Vgt) (maksimum): Tidak berkenaan
Output Semasa (maksimum): Tidak berkenaan
VDSS: 800V
ID: 50A
IDM: 200A
VGSS: ±30V
EAS: 4500mJ
EAR: 60mJ
P: 690w
TJ, Tstg: -55~+150ºC
800V N-Channel Power MOSFET
YZPST-SP50N80FX
CIRI-CIRI
Menukar cepat
100% Avalanche diuji
Keupayaan DV/DT yang lebih baik
Aplikasi
Bekalan Kuasa Mod Tukar (SMPS)
Bekalan Kuasa Tidak Terpusing (UPS)
Pembetulan Faktor Kuasa (PFC)
Device Ordering Marking Packing Information |
|||
Ordering Number |
Package |
Marking |
Packing |
SP50N80FX |
SOT-227 |
SP50N80FX |
Tube |
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted |
|||
Parameter |
Symbol |
Value |
Unit |
Drain-Source Voltage (VGS = 0V) |
VDSS |
800 |
V |
Continuous Drain Current |
ID |
50 |
A |
Pulsed Drain Current (note1) |
IDM |
200 |
A |
Gate-Source Voltage |
VGSS |
±30 |
V |
Single Pulse Avalanche Energy (note2) |
EAS |
4500 |
mJ |
Repetitive Avalanche Energy (note1) |
EAR |
60 |
mJ |
Power Dissipation (TC = 25ºC) |
PD |
690 |
W |
Operating Junction and Storage Temperature Range |
TJ, Tstg |
-55~+150 |
ºC |
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. |
Thermal Resistance |
|||
Parameter |
Symbol |
Value |
Unit |
Thermal Resistance, Junction-to-Case |
RthJC |
0.18 |
ºC/W |
Thermal Resistance, Junction-to-Ambient |
RthJA |
40 |
Specifications TJ = 25ºC, unless otherwise noted |
||||||
Parameter |
Symbol |
Test Conditions |
Value |
Unit |
||
Min. |
Typ. |
Max. |
||||
Static |
||||||
Drain-Source Breakdown Voltage |
V(BR)DSS |
VGS = 0V, ID = 250µA |
800 |
-- |
-- |
V |
Zero Gate Voltage Drain Current |
IDSS |
VDS =800, VGS = 0V, TJ = 25ºC |
-- |
-- |
1.0 |
μA |
Gate-Source Leakage |
IGSS |
VGS = ±30V |
-- |
-- |
±100 |
nA |
Gate-Source Threshold Voltage |
VGS(th) |
IDS = 250µA |
2.5 |
-- |
4.5 |
V |
Drain-Source On-Resistance (Note3) |
RDS(on) |
VGS = 10V, ID = 25A |
-- |
120 |
130 |
mΩ |
Dynamic |
||||||
Input Capacitance |
Ciss |
VGS = 0V, VDS = 25V, f = 1.0MHz |
-- |
14600 |
-- |
pF |
Output Capacitance |
Coss |
-- |
1300 |
-- |
||
Reverse Transfer Capacitance |
Crss |
-- |
66 |
-- |
||
Total Gate Charge |
Qg |
VDD =400V, ID =50A, VGS = 10V |
-- |
360 |
-- |
nC |
Gate-Source Charge |
Qgs |
-- |
80 |
-- |
||
Gate-Drain Charge |
Qgd |
-- |
120 |
-- |
||
Turn-on Delay Time |
td(on) |
VDD = 400V, ID =50A, RG = 10 Ω |
-- |
110 |
-- |
ns |
Turn-on Rise Time |
tr |
-- |
200 |
-- |
||
Turn-off Delay Time |
td(off) |
-- |
160 |
-- |
||
Turn-off Fall Time |
tf |
-- |
185 |
-- |
||
Drain-Source Body Diode Characteristics |
||||||
Continuous Body Diode Current |
IS |
TC = 25 ºC |
-- |
-- |
50 |
A |
Pulsed Diode Forward Current |
ISM |
-- |
-- |
400 |
||
Body Diode Voltage |
VSD |
TJ = 25ºC, ISD = 25A, VGS = 0V |
-- |
-- |
1.4 |
V |
Reverse Recovery Time |
trr |
VGS = 0V,IS = 50A, diF/dt =100A /μs |
-- |
520 |
-- |
ns |
Reverse Recovery Charge |
Qrr |
-- |
5.0 |
-- |
μC |
Nota
1. Penilaian berulang: lebar nadi terhad oleh suhu persimpangan maksimum
2. V DD = 50V, R G = 25 Ω, Memulakan T J = 25 ºC
Ujian Pulse: Lebar Pulse ≤ 300μs, kitaran tugas ≤ 1%
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