1200V n-saluran silikon karbida kuasa mosfet sic mosfet
$10100-999 Piece/Pieces
$6.5≥1000Piece/Pieces
Jenis bayaran: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Pengangkutan: | Ocean,Air |
Port: | SHANGHAI |
$10100-999 Piece/Pieces
$6.5≥1000Piece/Pieces
Jenis bayaran: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Pengangkutan: | Ocean,Air |
Port: | SHANGHAI |
Model No.: YZPST-M2G0080120D
Jenama: YZPST
VDSmax: 1200V
Id: 42A
Pd: 208W
VGS,op: -5/+20V
VGSmax: -10/+25V
Unit Jualan | : | Piece/Pieces |
Jenis Pakej | : | 1. Pembungkusan anti-elektrostatik 2. Kotak Karton 3. Pembungkusan Perlindungan Plastik |
Muat turun | : |
M2G0080120D
1200V n-saluran silikon karbida kuasa mosfet sic mosfet
ciri-ciri
• Pakej yang dioptimumkan dengan pin sumber pemacu berasingan
• Voltan menyekat tinggi dengan rintangan rendah
• Beralih berkelajuan tinggi dengan kapasitans yang rendah
• Diod intrinsik cepat dengan pemulihan terbalik rendah (qrr)
• Mudah untuk selari
• Mematuhi ROHS
Faedah
• Kecekapan sistem yang lebih tinggi
• Kurangkan keperluan penyejukan
• Peningkatan ketumpatan kuasa
• Membolehkan frekuensi yang lebih tinggi
• Kurangkan gerbang gerbang
• Pengurangan kerumitan sistem dan kos
Aplikasi
• Bekalan kuasa mod suis
• Penukar dc/dc
• Penyongsang solar
• Pengecas bateri
• Pemacu motor
Penilaian maksimum (TC = 25 ° C melainkan dinyatakan sebaliknya)
Symbol | Parameter | Value | Unit | Test Conditions | Note |
f^DSmax | Drain-Source Breakdown Voltage | 1200 | V | 海=0 V, /d=100 卩A | |
Id | Continuous Drain Current | 42 | A | 4s=20 V Tc=25 °C | Fig. 18 |
Pd | Power Dissipation | 208 | W | *=25 °C | Fig. 19 |
FgS,op | Recommend Gate Source Voltage | -0.25 | V | ||
J^Smax | Maximum Gate Source Voltage | -0.4 | V | AC (f>lHz) | Note 1 |
Tj, Tstg | Operating Junction and Storage Temperature Range | -55 to | °C | ||
175 | |||||
7l | Soldering Temperature | 260 | °C |
Ciri -ciri elektrik
Symbol | Parameter | Min. | Typ. | Max. | Unit | Test Conditions | Note |
Static | |||||||
BVds | Drain-Source Breakdown Voltage | 1200 | - | - | V | 4s=0 V, Zd=100 卩A | |
A)ss | Zero Gate Voltage Drain Current | — | 11 | 100 | 丹s=1200 V Pgs=0 V | ||
Igss | Gate-Source Leakage | — | 10 | 250 | nA | 4s=20 V | |
FGS(th) | Gate-Source Threshold Voltage | 2 | — | 4 | V | Id=5 mA, | Fig. 11 |
&DS(on) | Drain-Source On-Resistance | — | 78 | 100 | mQ | 国=20 V, Zd=20 A | Fig. 6 |
Dynamic | |||||||
Ciss | Input Capacitance | — | 1128 | PF | 4s=0 V,比s=1000 V | Fig. 17 | |
C^oss | Output Capacitance | — | 86 | f^l.OMHz,瓜=25 mV | |||
Crss | Reverse Transfer Capacitance | — | 5 | ||||
Eoss | Coss Stored Energy | - | 44 | 卩J | Fig. 16 | ||
Qs | Total Gate Charge | — | 52 | nC | moo V | Fig. 12 | |
figs | Gate-Source Charge | - | 17 | 血=20 A | |||
Qgd | Gate-Drain Charge | - | 15 | Fgs=-5/+20 V | |||
td(cn) | Turn-on Delay Time | — | 41 | ns | 丹 s=800 V | ||
tr | Turn-on Rise Time | - | 21 | Fgs=-5/+20 V | |||
Turn-off Delay Time | — | 48 | Id=20A | ||||
tf | Turn-off Fall Time | — | 16 | Ro(ext)=2.5 Q | |||
RG(int) | Internal Gate Resistance | - | 4 | n | E.O MHz, Vac=25 mV |
Skema litar ujian
Sic mosfet
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