$2.15100-999 Piece/Pieces
$1.85≥1000Piece/Pieces
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| Pengangkutan: | Ocean,Air |
| Port: | SHANGHAI |
Model No.: YZPST-FM3N150C
Jenama: YZPST
Tempat Asal: China
Vdss: 1500V
ID Continuous (Tc = 25 °C ): 1.8A
ID Continuous ( Tc = 100 °C ): 1.2A
Idm: 12A
Vgss: ±30V
EAS: 225mJ
Dv/dt: 5V/ns
| Unit Jualan | : | Piece/Pieces |
| Jenis Pakej | : | 1. Pembungkusan anti-elektrostatik 2. Kotak Karton 3. Pembungkusan Perlindungan Plastik |
| Muat turun | : |
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1500V N-Channel MOSFET
YZPST-FM3N150C
Deskripsi umum
MOSFET kuasa ini dihasilkan menggunakan teknologi planar self-selaras lanjutan. Teknologi canggih ini telah disesuaikan untuk meminimumkan rintangan di negeri, memberikan prestasi pensuisan yang unggul, dan menahan nadi tenaga yang tinggi dalam mod longsor dan komutasi.
Peranti ini boleh digunakan dalam pelbagai litar pensuisan kuasa untuk pengurangan sistem dan kecekapan yang lebih tinggi.
ciri-ciri
3a, 1500v, rds (on) typ. = 5q@vgs = 10 v ld = 1.5a
Caj Gerbang Rendah (tipikal9.3nc)
Caj Gerbang Rendah (tipikal2.4pf)
Menukar cepat
100% Avalanche diuji
Penilaian maksimum mutlak TC = 25 ° C melainkan dinyatakan sebaliknya
| Symbol | Parameter | JFFM3N150C | Units | |
| Vdss | Drain - Source Voltage | 1500 | V | |
| Id | Drain Current | Continuous (Tc = 25 °C ) | 1.8 | A |
| Continuous ( Tc = 100 °C ) | 1.2 | A | ||
| Idm | Drain Current - Pulsed ( Note 1) | 12 | A | |
| Vgss | Gate - Source Voltage | ±30 | V | |
| EAS | Single Pulsed Avalanche Energy ( Note 2 ) | 225 | mJ | |
| dv/dt | Peak Diode Recovery dv/dt ( Note 3 ) | 5 | V/ns | |
| Pd | Power Dissipation (Tc = 25 °C ) | 30 | W | |
| Tj,Tstg | Operating and Storage Temperature Range | -55 to +150 | °C | |
| Tl | Maximum lead temperature for soldering purposes | 300 | °C | |
| 1/8 frome case for 5 seconds | ||||
Ciri -ciri terma
| Symbol | Parameter | JFFM3N150C | Units |
| Raic | Thermal Resistance, Junction-to-Case | 4.1 | °C/W |
| Rqja | Thermal Resistance, Junction-to-Ambient | 62.5 | °c/w |
Ciri -ciri elektrik TC = 25 ° C melainkan dinyatakan sebaliknya
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |
| Off Characteristics | ||||||
| BVdss | Drain - Source Breakdown Voltage | Vgs = 0 V, Id =250 uA | 1500 | V | ||
| / BVdss/ | Breakdown Voltage Temperature Coefficient | Id = 250 uA, Referenced to | -- | 1.3 | -- | v/°c |
| Tj | 25 °C | |||||
| Zero Gate Voltage Drain Current | Vds = 1500 V, Vgs = 0 V | 25 | uA | |||
| Idss | Vds = 1200 V, Tc = 125 °C | -- | -- | 500 | uA | |
| Igssf | Gate-Body Leakage Current, Forward | Vgs = 30 V, Vgs = 0 V | — | — | 100 | nA |
| Igssr | Gate-Body Leakage Current, Reverse | Vgs = -30 V, Vgs = 0 V | — | — | -100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | Vds = Vgs, Id = 250 uA | 3 | — | 5 | V |
| RDS(on) | Static Drain-Source on-Resista nee | Vgs = 10 V, Id= 1.5A | — | 5 | 8 | Q |
| gFS | Forward Transconductance | Vds = 30 V, Id= 1.5 A ( Note | -- | 4.5 | -- | S |
| 4) | ||||||
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | Vds = 25 V, Vgs = 0 V, f = | — | 1938 | — | pF |
| Coss | Output Capacitance | 1.0 MHz | — | 104 | — | pF |
| Crss | Reverse Transfer Capacitance | — | 2.4 | — | pF | |
| Rg | Gate resistance | F= 1.0 MHz | 3.5 | Q | ||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | 34 | ns | |||
| tr | Turn-On Rise Time | Vds = 750 V, Id=3.0A/ Rg = | 17 | ns | ||
| td(off) | Turn-Off Delay Time | 100 , Vgs = 10 V (Note 4,5) | 56 | ns | ||
| tf | Turn-Off Fall Time | 27 | ns | |||
| Qe | Total Gate Charge | Vds = 750 V, Id =3.0 A Vgs = | 9.3 | nC | ||
| Qgs | Gate-Source Charge | 10 V (Note 4,5) | 15 | nC | ||
| Qgd | Gate-Drain Charge | 5.3 | nC | |||
| Drain - Source Diode Characteristics and Maximum Ratings | ||||||
| Is | Maximum Continuous Drain-Source Diode Forward Current | 3 | A | |||
| Ism | Maximum Pulsed Drain-Source Diode Forward Current | 12 | A | |||
| Vsd | Drain-Source Diode Forward Voltage | Vgs = 0 V, Is = 3.0 A | 1.5 | V | ||
| trr | Reverse Recovery Time | Vgs = 0 V, Is = 3.0 A | 302 | ns | ||
| Qrr | Reverse Recovery Charge | dlF/dt = 100 A/us ( Note | -- | 10 | -- | uC |
| 4) | ||||||
Nota:
1. Penilaian berulang: lebar berdenyut terhad oleh suhu persimpangan maksimum
2. l = lo.omh, IAS = 6.7a, rg = 25q, starttj = 25 ° C
3. ISD <3.0a z di/dt <looa/us, vdd <bvdss, bermula tj = 25 ° C
4. Ujian Pulsed: Lebar berdenyut <kitaran tugas Z 3u < 2%
5. Pada dasarnya bebas daripada suhu operasi
Tel: 86-514-87782298
Whatsapp: +8613805278321
Alamat: 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu China
Laman web: https://ms.yzpst.com
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