Keupayaan dV / dt tinggi Thristor kuasa tinggi 1600V untuk aplikasi kawalan fasa
$1651-9 Piece/Pieces
$125≥10Piece/Pieces
Jenis bayaran: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Pesanan minimum: | 1 Piece/Pieces |
Pengangkutan: | Ocean,Air |
Port: | SHANGHAI |
$1651-9 Piece/Pieces
$125≥10Piece/Pieces
Jenis bayaran: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Pesanan minimum: | 1 Piece/Pieces |
Pengangkutan: | Ocean,Air |
Port: | SHANGHAI |
Model No.: YZPST-R3559TD16K
Jenama: YZPST
Unit Jualan | : | Piece/Pieces |
Jenis Pakej | : | 1. Pembungkusan anti-elektrostatik 2. Kotak kadbod 3. Pembungkusan pelindung plastik |
Muat turun | : |
THYRISTOR DAYA TINGGI UNTUK APLIKASI PENGENDALIAN FASA
thyristor berkuasa tinggi YZPST-R3559TD16K
Ciri-ciri:
. Semua Struktur Tersebar
. Konfigurasi Gerbang Penguat Bersama
. Masa Giliran Maksimum Dijamin
. Keupayaan dV / dt tinggi
. Peranti Berkumpul Tekanan
Sekatan - Keadaan Mati
Device Type |
VRRM (1) |
VDRM (1) |
VRSM (1) |
R3559TD16K |
1600 |
1600 |
1700 |
V RRM = Voltan terbalik puncak berulang
V DRM = Puncak berulang voltan keadaan mati
V RSM = Voltan terbalik puncak tidak berulang (2)
Repetitive peak reverse leakage and off state leakage |
IRRM / IDRM
|
20 mA 150 mA (3) |
Critical rate of voltage rise |
dV/dt (4) |
1000 V/msec |
Catatan:
Semua penilaian ditentukan untuk Tj = 25 o C kecuali
dinyatakan sebaliknya.
(1) Semua peringkat voltan ditentukan untuk digunakan
Bentuk gelombang sinusoidal 50Hz / 60zHz di atas
julat suhu -40 hingga +125 o C.
(2) 10 msec. maks. lebar nadi
(3) Nilai maksimum untuk Tj = 125 o C.
(4) Nilai minimum untuk linear dan eksponensial
waveshape hingga 80% dinilai V DRM . Pintu terbuka.
Tj = 125 o C.
(5) Nilai tidak berulang.
(6) Nilai di / dt ditentukan sesuai
dengan EIA / NIMA Standard RS-397, Bahagian
5-2-2-6. Nilai yang ditentukan akan menjadi tambahan
ke yang diperoleh dari rangkaian snubber,
terdiri daripada kapasitor 0.2 mF dan 20 ohm
rintangan selari dengan thristor di bawah
ujian.
Menjalankan - pada keadaan
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Average value of on-state current |
IT(AV) |
|
3500 |
|
A |
Sinewave,180o conduction,Tc=70oC |
RMS value of on-state current |
ITRMS |
|
7000 |
|
A |
Nominal value |
Peak one cPSTCle surge (non repetitive) current |
ITSM |
|
42000
38000 |
|
A
A |
8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
I square t |
I2t |
|
7.5x106 |
|
A2s |
8.3 msec |
Latching current |
IL |
|
1000 |
|
mA |
VD = 24 V; RL= 12 ohms |
Holding current |
IH |
|
500 |
|
mA |
VD = 24 V; I = 2.5 A |
Peak on-state voltage |
VTM |
|
1.95 |
|
V |
ITM = 5000 A; Tj = 125 oC |
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
800 |
|
A/ms |
Switching from VDRM £ 1000 V, non-repetitive |
Critical rate of rise of on-state current (6) |
di/dt |
|
300 |
|
A/ms |
Switching from VDRM £ 1000 V |
Gating
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Peak gate power dissipation |
PGM |
|
200 |
|
W |
tp = 40 us |
Average gate power dissipation |
PG(AV) |
|
5 |
|
W |
|
Peak gate current |
IGM |
|
20 |
|
A |
|
Gate current required to trigger all units |
IGT |
|
300 200 125 |
|
mA mA mA |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC |
Gate voltage required to trigger all units
|
VGT |
0.30 |
5 4
|
|
V V V |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
Peak negative voltage |
VGRM |
|
20 |
|
V |
|
thyristor untuk aplikasi kawalan fasa
Thyristor dV / dt tinggi
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