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Rumah> Produk-produk> Peranti cakera semikonduktor (jenis kapsul)> Fasa Kawalan Thyristor.> 2100V Interdigitated mengukur fasa kawalan Thyristor
2100V Interdigitated mengukur fasa kawalan Thyristor
2100V Interdigitated mengukur fasa kawalan Thyristor
2100V Interdigitated mengukur fasa kawalan Thyristor

2100V Interdigitated mengukur fasa kawalan Thyristor

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Jenis bayaran:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
Pengangkutan:Ocean,Air
Port:Shanghai
Penerangan produk
Atribut Produk

Model No.YZPST-R2619ZC21J

JenamaYZPST

Penerangan produk
THIRTOR POWER TINGGI UNTUK KAWALAN FASA

YZPST-R2619ZC21J

Ciri-ciri:

. Semua Struktur Tersebar

. Konfigurasi Pintu Mengandungi Interdigitated

. Masa pusingan maksimum dijamin

. Tinggi dV / dt Keupayaan

. Tekanan Dipasang Alat



KARAKTERISTIK DAN KADAR ELEKTRIK

Menyekat - Mati Negeri

VRRM (1)

VDRM (1)

VRSM (1)

2100

2100

2200

V RRM = Voltan terbalik puncak berulang

V DRM = Pusingan voltan negeri yang berulang-ulang

V RSM = Voltan terbalik puncak berulang-ulang (2)


Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

20 mA

200 mA (3)

Critical rate of voltage rise

dV/dt (4)

200 V/msec

Melakukan - pada keadaan

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)M

2619

A

Sinewave,180o conduction,Tc=55oC

RMS value of on-state current

ITRMS

5227

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

ITSM

33.8

  

37.2

kA

kA

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

5.71x106

A2s

8.3 msec

Latching current

IL

-

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

1000

mA

VD = 24 V; I =2.5 A

Peak on-state voltage

VTM

2.3

V

ITM = 4000 A

Critical rate of rise of on-state

current (5, 6)

di/dt

1500

A/ms

Switching from VDRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

1000

A/ms

Switching from VDRM £ 1000 V

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

30

W

Average gate power dissipation

PG(AV)

5

W

Peak gate current

IGM

-

A

Gate current required to trigger all units

IGT

300

mA

VD = 10 V;IT=3A;Tj = +25 oC

Gate voltage required to trigger all units

VGT

3

V

VD = 10 V;IT=3A;Tj = +25 oC

Peak negative voltage

VRGM

5

V

Dinamik

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

tgd

-

0.8

ms

VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C

Turn-on time

tgt

-

1.5

Turn-off time (with VR = -5 V)

tq

-

50

ms

ITM=4000A, tp=2000us, di/dt=60A/us, Vr=100V, Vdr=67%VDRM, dVdr/dt=200V/us

Reverse recovery current

Irm

-

A

ITM=4000A, tp=2000us, di/dt=60A/us

KARAKTERISTIK DAN PENINGKATAN MESIN DAN MEKANIK

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

 

oC

 

Storage temperature

Tstg

-40

+150

 

oC

 

Thermal resistance - junction to case

RQ (j-c)

 

-

-

 

K/kW

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (c-s)

 

-

-

 

K/kW

Double sided cooled *

Single sided cooled *

Thermal resistamce - junction to sink

RQ (c-s)

 

11

22

 

K/kW

Double sided cooled *

Single sided cooled *

Mounting force

F

27

47

-

kN

 

Weight

W

 

 

1.7

Kg

about

* Melekap permukaan licin, rata dan lancar

Nota: untuk garisan dan dimensi kes, lihat lukisan garisan kes pada halaman terakhir Data Teknikal ini



Fast thyristors 63H20

Sym

A

B

C

D

H

mm

109

73

98

3.5×3

35±1

Rumah> Produk-produk> Peranti cakera semikonduktor (jenis kapsul)> Fasa Kawalan Thyristor.> 2100V Interdigitated mengukur fasa kawalan Thyristor
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