YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Rumah> Produk-produk> Peranti cakera semikonduktor (jenis kapsul)> Fasa Kawalan Thyristor.> Kawalan Tegasan Tinggi Thyristor SCR kp1000A 6500V
Kawalan Tegasan Tinggi Thyristor SCR kp1000A 6500V
Kawalan Tegasan Tinggi Thyristor SCR kp1000A 6500V
Kawalan Tegasan Tinggi Thyristor SCR kp1000A 6500V

Kawalan Tegasan Tinggi Thyristor SCR kp1000A 6500V

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Incoterm:FOB,CFR,CIF
Pengangkutan:Ocean,Air
Port:Shanghai
Penerangan produk
Atribut Produk

Model No.YZPST-KP1000A6500V

JenamaYZPST

Penerangan produk

Kawalan Fasa Thyristors

YZPST-KP1000A6500V

Kawalan Fasa Thyristors 6600V adalah pendek untuk penerus thyristor. Ia adalah sejenis alat semikonduktor kuasa tinggi dengan empat lapisan tiga persimpangan PN, juga dikenali sebagai thyristor. Dengan ciri-ciri volum kecil, struktur mudah dan fungsi yang kuat, ia adalah salah satu peranti semikonduktor yang paling biasa digunakan.

Symbol

Definition

Conditions

 

min.

typ.

max.

Unit

V

max. non-repetitive reverse/forward blocking voltage

TJ = 25°C

 

 

6600

V

V

max. repetitive reverse/forward blocking voltage

TJ = 25°C

 

 

6500

V

VT

On-state voltage

IT=1000 A

TJ = 25°C

 

 

2.95

V

IT(AV)

average forward current

TC=25°C

 

 

 

1000

A

IT(RMS)

RMS forward current

180° sine

 

 

 

1140

A

RthJC

thermal resistance junction to case

 

 

 

 

22

K/KW

RthCH

thermal resistance case to heatsink

 

 

 

 

4

K/KW

ITSM

max. forward surge current

t = 10 ms; (50 Hz), sine

TJ = 25°C

 

 

9.7

kA

I²t

value for fusing

t = 10 ms; (50 Hz), sine

TJ = 25°C

 

 

470

kA²s

di/dt

Rate of rise of on-state current

TJ = 125°C; f = 50 Hz

tP=200µs;diG/dt=0.15A/µs;

IG=0.15A;VD= 2/3VDRM

repetitive

 

 

50

A/µs

non-repet

 

 

1000

A/µs

dv/dt

Maximum linear rate of rise of off-state voltage

VD= 2/3
V
DRM

RGK =∞; method 1 (linear voltage rise)

TJ = 125°C

 

 

2000

V/µs

VGT

gate trigger voltage

VD = 6V

TJ = 25°C

 

 

2.6

V

IGT

gate trigger current

VD = 6V

TJ = 25°C

 

 

400

mA

IL

latching current

 

TJ = 25°C

 

 

500

mA

IH

holding current

 

TJ = 25°C

 

 

900

mA

tgd

gate controlled delay time

 

TJ = 25°C

 

 

3

µs

tq

Turn-off time

VR=10 V; IT=20A; VD= 2/3
V
DRM

TJ = 150°C

 

 

600

µs

Tstg

storage temperature

 

 

-40

 

140

°C

TJ

virtual junction temperature

 

 

 

 

125

°C

Wt

Weight

 

 

 

 

 

g

F

mounting force

 

 

14

22

24

kN



Lukisan Garis Besar

High Voltage Thyristor Control SCR kp1000A 6500V

Rumah> Produk-produk> Peranti cakera semikonduktor (jenis kapsul)> Fasa Kawalan Thyristor.> Kawalan Tegasan Tinggi Thyristor SCR kp1000A 6500V
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