4000A 2500V KK4000 Thyristors Fasa Kawalan
dapatkan harga terkiniJenis bayaran: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Pengangkutan: | Ocean,Air |
Port: | Shanghai |
Jenis bayaran: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Pengangkutan: | Ocean,Air |
Port: | Shanghai |
Model No.: YZPST-KK4000A2500V
Jenama: YZPST
Kawalan fasa thyristor kuasa tinggi
YZPST-KK4000A2500V
Fasa thyristor kawalan
Pada suhu ambien tertentu, voltan tertentu ditambahkan di antara anod dan katod untuk membolehkan arus dan voltan kawalan minimum yang diperlukan untuk thyristor untuk beralih dari negeri ke konduksi.
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Average value of on-state current |
IT(AV) |
|
4000 |
|
A |
Sinewave,180o conduction,Tc=70oC |
RMS value of on-state current |
ITRMS |
|
4900 |
|
A |
Nominal value |
Peak one cPSTCle surge (non repetitive) current |
ITSM |
|
55000
52000 |
|
A
A |
8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
I square t |
I2t |
|
5.5x106 |
|
A2s |
8.3 msec |
Latching current |
IL |
|
1000 |
|
mA |
VD = 24 V; RL= 12 ohms |
Holding current |
IH |
|
500 |
|
mA |
VD = 24 V; I = 2.5 A |
Peak on-state voltage |
VTM |
|
2.30 |
|
V |
ITM = 3000 A; |
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
800 |
|
A/ms |
Switching from VDRM£ 1000 V, non-repetitive |
Critical rate of rise of on-state current (6) |
di/dt |
|
300 |
|
A/ms |
Switching from VDRM£ 1000 V |
Gating
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Peak gate power dissipation |
PGM |
|
200 |
|
W |
tp = 40 us |
Average gate power dissipation |
PG(AV) |
|
5 |
|
W |
|
Peak gate current |
IGM |
|
20 |
|
A |
|
Gate current required to trigger all units |
IGT |
|
300 200 125 |
|
mA mA mA |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC |
Gate voltage required to trigger all units
|
VGT |
0.30 |
5 4
|
|
V V V |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
Peak negative voltage |
VGRM |
|
20 |
|
V |
|
Dinamik
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Delay time |
td |
|
2.0 |
|
ms |
ITM = 50 A; VD = 67% VDRM Gate pulse: VG = 30 V; RG = 10 ohms; tr = 0.1 ms; tp = 20 ms |
Turn-off time (with VR = -5 V) |
tq |
|
80 |
|
ms |
ITM > 2000 A; di/dt = 25 A/ms; VR³ -5 V; Re-applied dV/dt = 400 V/ms linear to 67% VDRM ; Tj = 125 oC; Duty cPSTCle ³ 0.01% |
Reverse recovery current |
Irr |
|
200 |
|
A |
ITM > 2000 A; di/dt = 25 A/ms; VR³ -50 V; Tj = 125 oC |
KARAKTERISTIK DAN PENINGKATAN MESIN DAN MEKANIK
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
Storage temperature |
Tstg |
-40 |
+150 |
|
oC |
|
Thermal resistance - junction to case |
RQ (j-c) |
|
0.012
|
|
oC/W |
Double sided cooled Single sided cooled |
Thermal resistamce - case to sink |
RQ (c-s) |
|
0.002
|
|
oC/W |
Double sided cooled * Single sided cooled * |
Mounting force |
P |
10000 |
12000
|
|
lb. kN |
|
Weight |
W |
|
|
3.5 1.60 |
Lb. Kg. |
|
Melekap permukaan licin, rata dan lancar
Nota: untuk garis besar dan dimensi, lihat gambarajah garisan kes dalam halaman 3 Data Teknikal ini
A: 100 mm
B: 150 mm
C: 127 mm
D: 35 mm
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