Kuasa Tinggi Thyristors 1718A CE 1800V
dapatkan harga terkiniJenis bayaran: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Pengangkutan: | Ocean,Air |
Port: | Shanghai |
Jenis bayaran: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Pengangkutan: | Ocean,Air |
Port: | Shanghai |
Model No.: YZPST-N1718NS180
Jenama: YZPST
THYRISTOR POWER TINGGI UNTUK KAWALAN FASA
YZPST-N1718NS18
Ciri-ciri: Tekanan Dipasang Alat. Konfigurasi Pintu Mengandungi Interdigitated . Semua Struktur Tersebar . Tinggi dV / dt Keupayaan . . Masa pusingan maksimum dijamin .
KARAKTERISTIK DAN KADAR ELEKTRIKMenyekat - Mati Negeri
VRRM (1) |
VDRM (1) |
VRSM (1) |
1800 |
1800 |
1900 |
V RRM = Voltan terbalik puncak berulang
V DRM = Pusingan balik voltan negeri berulang
V RSM = Voltan terbalik puncak berulang-ulang (2)
Repetitive peak reverse leakage and off state leakage |
IRRM / IDRM |
20 mA 100 mA (3) |
Critical rate of voltage rise |
dV/dt (4) |
1000 V/msec |
Nota:
Semua penilaian ditentukan untuk Tj = 25 oC melainkan dinyatakan sebaliknya.
(1) Semua penilaian voltan ditentukan untuk digunakan
Gelombang sinusoidal 50Hz / 60zHz ke atas
julat suhu -40 hingga +125 oC.
(2) 10 msec. maks. lebar nadi
(3) Nilai maksimum untuk Tj = 125 oC.
(4) Nilai minimum untuk waveshape linear dan eksponen hingga 80% undian VDRM. Pintu dibuka. Tj = 125 oC.
(5) Nilai tidak berulang.
(6) Nilai di / dt ditubuhkan mengikut Standard EIA / NIMA RS-397, Seksyen 5-2-2-6. Nilai yang ditentukan adalah sebagai tambahan kepada yang diperolehi dari litar ubber, yang terdiri daripada kapasitor 0.2 F dan 20 ohmsresistance selari dengan thresor di bawah ujian.
Menjalankan - pada keadaan
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Max. average value of on-state current |
IT(AV)M |
|
1718 |
|
A |
Sinewave,180o conduction,Tc=55oC |
RMS value of on-state current |
IT(RMS)m |
|
3450 |
|
A |
Nominal value |
Peak one cPSTCle surge (non repetitive) current |
ITSM |
|
-
27.2 |
|
kA
kA |
8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
I square t |
I2t |
|
3.7x106 |
|
A2s |
8.3 msec |
Latching current |
IL |
|
- |
|
mA |
VD = 24 V; RL= 12 ohms |
Holding current |
IH |
|
1000 |
|
mA |
VD = 24 V; I = 2.5 A |
Peak on-state voltage |
VTM |
|
1.41 |
|
V |
ITM = 2550 A |
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
1000 |
|
A/ms |
Switching from VDRM £ 1000 V, non-repetitive |
Critical rate of rise of on-state current (6) |
di/dt |
|
500 |
|
A/ms |
Switching from VDRM £ 1000 V |
Gating
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Peak gate power dissipation |
PGM |
|
30 |
|
W |
|
Average gate power dissipation |
PG(AV) |
|
4 |
|
W |
|
Peak gate current |
IGM |
|
- |
|
A |
|
Gate current required to trigger all units |
IGT |
|
300 |
|
mA |
VD = 10 V;IT=3A;Tj = +25 oC
|
Gate voltage required to trigger all units
|
VGT |
|
3.0 |
|
V
|
VD = 10 V;IT=3A;Tj = +25 oC
|
Peak negative voltage |
VRGM |
|
5 |
|
V |
|
Dinamik
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Delay time |
tgd |
|
1.5 |
- |
ms |
VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C |
Turn-on time |
tgt |
|
2.5 |
- |
|
|
Turn-off time (with VR = -5 V) |
tq |
- |
170 |
- |
ms |
ITM=1000A, tp=1000us, di/dt=10A/us, Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/us |
Reverse recovery current |
Irm |
|
- |
|
A |
ITM=4000A, tp=2000us, di/dt=60A/us |
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.