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Rumah> Produk-produk> Peranti stud semikonduktor> Fasa Kawalan Stud Thyristor> Frekuensi tinggi DC Encapsulation Thyristors
Frekuensi tinggi DC Encapsulation Thyristors
Frekuensi tinggi DC Encapsulation Thyristors
Frekuensi tinggi DC Encapsulation Thyristors

Frekuensi tinggi DC Encapsulation Thyristors

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Port:Shanghai
Atribut Produk

Model No.YZPST-T700123503BY

JenamaYZPST

Pembungkusan & Penghantaran
Unit Jualan : Others
Muat turun :
Penerangan produk


Thyristors kawalan fasa

YZPST-T700123503BY

Ciri -ciri thyristors kawalan fasa: Pusat menguatkan konfigurasi pintu, enkapsulasi terikat mampatan, keupayaan DV/DT yang tinggi dan jenis stud, thread inci atau metrik. Aplikasi tipikal thyristors frekuensi tinggi adalah penukaran kuasa sederhana dan bekalan kuasa DC.


Penilaian dan ciri maksimum

Symbol

Parameter

Values

Units

Test Conditions

ON-STATE

ITAV

Mean on-state current

350

A

Sinewave,180° conduction,Tc=85

ITRMS

RMS value of on-state current

550

A

Nominal value

ITSM

Peak one cycle surge

(non repetitive) current

9.1

KA

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I2t

I square t

416

KA2s

8.3 msec and 10.0 msec

IL

Latching current

-

mA

VD = 24 V; RL= 12 ohms

IH

Holding current

-

mA

VD = 24 V; I = 2.5 A

VTM

Peak on-state voltage

1.4

V

ITM = 625 A; Duty cycle £ 0.01%

di/dt

Critical rate of rise

of on-state current

non-repetitive

800

A/ms

Gate drive 20V, 20Ω, tr≤1μs, Tj=Tjmax, anode voltage≤80% VDRM

repetitive

150

BLOCKING

VDRM

VRRM

Repetitive peak off state voltage

Repetitive peak reverse voltage

1200

V

VDSM

VRSM

Non repetitive peak off state voltage

Non repetitive peak reverse voltage

1300

V

IDRM

IRRM

Repetitive peak off state current Repetitive peak reverse  current

30

mA

Tj = 125 oC ,VRRM VDRM applied

dV/dt

Critical rate of voltage rise

1000

V/ms

TJ=TJmax, linear to 80% rated VDRM

TRIGGEING

PG(AV)

Average gate power dissipation

3

W

PGM

Peak gate power dissipation

16

W

IGM

Peak gate current

-

A

IGT

Gate trigger current

150

mA

TC = 25 oC

VGT

Gate trigger voltage

3.0

V

TC = 25 oC

VGD

Gate non-trigger voltage

0.15

V

Tj = 125 oC

SWITCHING

tq

Turn-off time

150

ms

ITM=550A, TJ=TJmax, di/dt=40A/μs,

VR=50V, dv/dt=20V/μs, Gate 0V 100Ω, tp=500μs

td

Delay time

-

Gate current A, di/dt=40A/μs,

Vd=0.67%VDRM, TJ=25 oC

Qrr

Reverse recovery charge

-

Termal dan mekanikal

Symbol

Parameter

Values

Units

Test Conditions

Tj

Operating temperature

-40~125

oC

Tstg

Storage temperature

-40~150

oC

R th (j-c)

Thermal resistance - junction to case

0.1

oC/W

DC operation ,Single sided cooled

R th (c-s)

Thermal resistance - case to sink

0.05

oC/W

Single sided cooled

P

Mounting force

3.5

Nm

W

Weight

-

g

about

Imej terperinci
High Frequency Thyristors

Rumah> Produk-produk> Peranti stud semikonduktor> Fasa Kawalan Stud Thyristor> Frekuensi tinggi DC Encapsulation Thyristors
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