100mA thyristor asimetri 1000A
dapatkan harga terkiniJenis bayaran: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Pengangkutan: | Ocean,Air |
Port: | Shanghai |
Jenis bayaran: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Pengangkutan: | Ocean,Air |
Port: | Shanghai |
Model No.: YZPST-KN1000A20-BSTR60133
Jenama: YZPST
Thyristor asimetri
YZPST-KN1000A20-BSTR60133
KARAKTERISTIK DAN KADAR ELEKTRIK
Thyristor asimetri KT55CT-KN1000A20-BSTR60133
Nota:
Semua penilaian ditetapkan untuk Tj = 25 oC melainkan dinyatakan sebaliknya.
(1) Semua penarafan voltan dinyatakan bagi suatu gelombang sinusoidal 50Hz / 60zHz yang digunakan pada julat suhu -40 hingga +125 oC.
(2) 10 msec. maks. lebar denyutan
(3) Nilai maksima untuk Tj = 125 oC.
(4) Nilai minimum untuk waveshape linear dan eksponen kepada VDRM yang diberi nilai 80%. Pintu dibuka. Tj = 125 oC.
(5) Nilai tidak berulang.
(6) Nilai di / dt ditubuhkan mengikut Standard EIA / NIMA RS-397, Seksyen 5-2-2-6. Nilai yang ditakrifkan akan ditambah-
yang diperolehi daripada litar snubber, yang terdiri daripada kapasitor 0.2 F dan rintangan 20 ohm selari dengan thresor di bawah ujian.
Menyekat - Mati Negeri
VRRM (1) |
VDRM (1) |
20 |
2000 |
V RRM = Voltan terbalik puncak berulang
V DRM = Pusingan voltan negeri yang berulang-ulang
Repetitive peak reverse leakage and off state leakage |
IRRM / IDRM
|
100 mA
|
Critical rate of voltage rise |
dV/dt (4) |
1000 V/msec |
Melakukan - pada keadaan
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Average value of on-state current |
IT(AV)M |
|
1000 |
|
A |
Sinewave,180o conduction,Tsink=55oC |
RMS value of on-state current |
ITRMS |
|
2000 |
|
A |
Nominal value |
Peak one cPSTCle surge (non repetitive) current |
ITSM |
|
20
|
|
KA |
10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
I square t |
I2t |
|
2x106 |
|
A2s |
10.0 msec |
Latching current |
IL |
|
- |
|
mA |
VD = 24 V; RL= 12 ohms |
Holding current |
IH |
|
1000 |
|
mA |
VD = 24 V; I =2.5 A |
Peak on-state voltage |
VTM |
|
2.42 |
|
V |
ITM =2000 A; Tj = 125 oC |
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
- |
|
A/ms |
Switching from VDRM £ 1000 V, non-repetitive |
Critical rate of rise of on-state current (6) |
di/dt |
|
800 |
|
A/ms |
Switching from VDRM £ 1000 V |
KARAKTERISTIK DAN KADAR ELEKTRIK
Gating
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Peak gate power dissipation |
PGM |
|
30 |
|
W |
tp = 40 us |
Average gate power dissipation |
PG(AV) |
|
5 |
|
W |
|
Peak gate current |
IGM |
|
- |
|
A |
|
Gate current required to trigger all units |
IGT |
|
- 300 - |
|
mA mA mA |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC |
Gate voltage required to trigger all units
|
VGT |
|
- 3.0 - |
|
V V V |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
Peak negative voltage |
VGRM |
|
5 |
|
V |
|
Dinamik
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Delay time |
td |
|
1.6 |
0.8 |
ms |
ITM =500 A; VD = Rated VDRM Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms |
Turn-off time (with VR = -50 V) |
tq |
|
- |
30 |
ms |
ITM =1000 A; di/dt =25 A/ms; VR ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0; Tj = 125 oC; Duty cPSTCle ³ 0.01% |
Reverse recovery charge |
Qrr |
|
- |
- |
mC |
ITM =1000 A; di/dt =25 A/ms; VR ³ -50 V |
* Untuk jaminan maksima. nilai, kilang kenalan.
KARAKTERISTIK DAN PENINGKATAN MESIN DAN MEKANIK
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
Storage temperature |
Tstg |
-40 |
+150 |
|
oC |
|
Thermal resistance - junction to case |
RQ (j-c) |
|
- - |
|
K/W |
Double sided cooled Single sided cooled |
Thermal resistance - case to heatsink |
RQ (c-s) |
|
- - |
|
K/W |
Double sided cooled Single sided cooled |
Thermal resistance - junction to heatsink |
RQ (j-s) |
|
0.02 0.04 |
|
K/W |
Double sided cooled Single sided cooled |
Mounting force |
P |
19 |
26 |
|
kN |
|
Weight |
W |
|
|
- |
g |
about |
* Melekap permukaan licin, rata dan lancar
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