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Penerangan produk

Atribut Produk

Penerangan produk

Atribut Produk

Model No.: YZPST-KN1000A16-BSTR60110

Jenama: YZPST

Penerangan produk

Thyristor asimetri

YZPST-KN1000A16-BSTR60110

KARAKTERISTIK DAN KADAR ELEKTRIK

Thyristor Asimetri Jenis: YZPST A60110

Nota:

Semua penilaian ditetapkan untuk Tj = 25 oC kecuali

dinyatakan sebaliknya.

(1) Semua penilaian voltan ditentukan untuk digunakan

Gelombang sinusoidal 50Hz / 60zHz ke atas

julat suhu -40 hingga +125 oC.

(2) 10 msec. maks. lebar denyutan

(3) Nilai maksima untuk Tj = 125 oC.

(4) Nilai minimum untuk linear dan eksponen

waveshape hingga 80% undian VDRM. Pintu dibuka.

Tj = 125 oC.

(5) Nilai tidak berulang.

(6) Nilai di / dt ditubuhkan mengikut

dengan EIA / NIMA Standard RS-397, Seksyen

5-2-2-6. Nilai yang ditakrifkan akan ditambah-

kepada yang diperolehi daripada litar snubber,

terdiri daripada kapasitor 0.2 F dan 20 ohm

rintangan selari dengan thristor di bawah

ujian.

Menyekat - Mati Negeri

VRRM (1)	VDRM (1)
20	1600

V _RRM = Voltan terbalik puncak berulang

V _DRM = Pusingan voltan negeri yang berulang-ulang

Repetitive peak reverse leakage and off state leakage

I_{RRM
/}I_DRM

100 mA

Critical rate of voltage rise

dV/dt (4)

1000 V/msec

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Average value of on-state current	I_T(AV)M		1000		A	Sinewave,180^o conduction,T_sink=55^oC
RMS value of on-state current	I_TRMS		2000		A	Nominal value
Peak one cPSTCle surge (non repetitive) current	I_TSM		20		KA	10.0 msec (50Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC
I square t	I²t		2x10⁶		A²s	10.0 msec
Latching current	I_L		-		mA	V_D = 24 V; R_L= 12 ohms
Holding current	I_H		1000		mA	V_{D =} 24 V; I =2.5 A
Peak on-state voltage	V_TM		2.42		V	I_TM =2000 A; T_j = 125 ^oC
Critical rate of rise of on-state current (5, 6)	di/dt		-		A/ms	Switching from V_DRM £ 1000 V, non-repetitive
Critical rate of rise of on-state current (6)	di/dt		800		A/ms	Switching from V_DRM £ 1000 V

Gating

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Peak gate power dissipation	P_GM		30		W	t_p= 40 us
Average gate power dissipation	P_G(AV)		5		W
Peak gate current	I_GM		-		A
Gate current required to trigger all units	I_GT		- 300 -		mA mA mA	V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC V_D = 6 V;R_L = 3 ohms;T_j = +25 ^oC V_D = 6 V;R_L = 3 ohms;T_j = +125^oC
Gate voltage required to trigger all units	V_GT		- 3.0 -		V V V	V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC V_D = 6 V;R_L = 3 ohms;T_j = 0-125^oC V_D = Rated V_DRM; R_L = 1000 ohms; T_j = + 125 ^oC
Peak negative voltage	V_GRM		5		V

Dinamik

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Delay time	t_d		1.6	0.8	ms	I_TM =500 A; V_D = Rated V_DRM Gate pulse: V_G = 20 V; R_G = 20 ohms; t_r = 0.1 ms; t_p = 20 ms
Turn-off time (with V_R = -50 V)	t_q		-	20	ms	I_TM =1000 A; di/dt =25 A/ms; V_R ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% V_DRM; V_G = 0; T_j = 125 ^oC; Duty cPSTCle ³ 0.01%
Reverse recovery charge	Q_rr		-	-	mC	I_TM =1000 A; di/dt =25 A/ms; V_R ³ -50 V

* Untuk jaminan maksima. nilai, kilang kenalan.

KARAKTERISTIK DAN PENINGKATAN MESIN DAN MEKANIK

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Operating temperature	T_j	-40	+125		^oC
Storage temperature	T_stg	-40	+150		^oC
Thermal resistance - junction to case	R_Q_(j-c)		- -		K/W	Double sided cooled Single sided cooled
Thermal resistance - case to heatsink	R_Q_(c-s)		- -		K/W	Double sided cooled Single sided cooled
Thermal resistance - junction to heatsink	R_Q_(j-s)		0.02 0.04		K/W	Double sided cooled Single sided cooled
Mounting force	P	19	26		kN
Weight	W			-	g	about