YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Rumah> Produk-produk> Peranti cakera semikonduktor (jenis kapsul)> Thyristric asymmetric.> 60mA Asymmetric Thyristor VRRM 30V
60mA Asymmetric Thyristor VRRM 30V
60mA Asymmetric Thyristor VRRM 30V
60mA Asymmetric Thyristor VRRM 30V
60mA Asymmetric Thyristor VRRM 30V
60mA Asymmetric Thyristor VRRM 30V
60mA Asymmetric Thyristor VRRM 30V

60mA Asymmetric Thyristor VRRM 30V

$601-99 Piece/Pieces

$48≥100Piece/Pieces

Jenis bayaran:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
Pesanan minimum:1 Piece/Pieces
Pengangkutan:Ocean,Air
Port:SHANGHAI
Penerangan produk
Atribut Produk

Model No.YZPST-A1237NC280

JenamaYZPST

私域 A1237nc280 截取 视频 15 秒 1-2.8m
私域 A1237nc280 截取 视频 15 秒 2-4.83m
Penerangan produk


Thyristor Asimetri

YZPST-A1237NC280

Syarikat Asymmetric Thyristor 25V telah lulus pensijilan sistem kualiti ISO9001 dan kualitinya terjamin. Sesuai untuk keperluan SCR anda.

Sekatan - Keadaan Mati

VDRM (1)

VDSM (1)

VRRM (1)

VRSM(1)

2800

2800

30

30

V RRM = Voltan terbalik puncak berulang

V DRM = Puncak berulang voltan keadaan mati

V RSM = Voltan terbalik puncak tidak berulang

Catatan:

Semua penilaian ditentukan untuk Tj = 25 o C kecuali

dinyatakan sebaliknya.

(1) Semua peringkat voltan ditentukan untuk digunakan

Bentuk gelombang sinusoidal 50Hz / 60zHz di atas

julat suhu -40 hingga +125 o C.

(2) 10 msec. maks. lebar nadi

(3) Nilai maksimum untuk Tj = 125 o C.

(4) Nilai minimum untuk linear dan eksponensial

waveshape hingga 80% dinilai V DRM . Pintu terbuka.

Tj = 125 o C.

(5) Nilai tidak berulang.

(6) Nilai di / dt ditentukan sesuai

dengan EIA / NIMA Standard RS-397, Bahagian

5-2-2-6. Nilai yang ditentukan akan menjadi tambahan

ke yang diperoleh dari rangkaian snubber,

terdiri daripada kapasitor 0.2 mF dan 20 ohm

rintangan selari dengan thristor di bawah

ujian.

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

 

10 mA

60 mA (3)

Critical rate of voltage rise

dV/dt (4)

3000 V/msec

Menjalankan - pada keadaan

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)M

 

1237

 

A

Sinewave,180o conduction,Tc=55oC

RMS value of on-state current

ITRMSM

 

2555

 

A

Nominal value

Peak one cycle surge

(non repetitive) current

 

ITSM

 

-

 

18

 

KA

 

KA

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

 

1.62x103

 

KA2s

8.3 msec and 10.0 msec

Latching current

IL

 

-

 

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

 

1000

 

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

 

2.1

 

V

ITM = 2000 A; Duty Cycle £ 0.01%; Tj =125 oC

Threshold vlotage

VT0

 

1.7

 

V

 

Slope resistance

rT

 

0.21

 

 

Critical rate of rise of on-state

current (5, 6)

di/dt

 

2000

 

A/ms

Switching from VDRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

 

1000

 

A/ms

Switching from VDRM £ 1000 V




Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

30

 

W

 

Average gate power dissipation

PG(AV)

 

10

 

W

 

Peak gate current

IGM

 

-

 

A

 

Gate current required to trigger all units

IGT

 

-

400

-

 

mA

mA

mA

VD = 10 V;RL = 3 ohms;Tj = -40 oC

VD = 10 V;RL = 3 ohms;Tj = +25 oC

VD = 10 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units

 

 

VGT

 

-

3.0

-

 

 

V

V

V

VD = 10 V;RL = 3 ohms;Tj = -40 oC

VD = 10 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VRGM

 

10

 

V

Dinamik

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

 

-

1

ms

ITM = 50 A; VD = Rated VDRM

Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq

 

-

20

ms

ITM = 1000 A; di/dt = 25 A/ms;

VR ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0;

Tj = 125 oC; Duty cycle ³ 0.01%

Reverse recovery charge

Qrr

 

-

-

mC

ITM = 1000 A; di/dt = 25 A/ms;

VR ³ -50 V

KARAKTERISTIK TERHADAP DAN MEKANIKAL

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

 

oC

 

Storage temperature

Tstg

-40

+150

 

oC

 

Thermal resistance - junction to case

RQ (j-c)

 

-

-

 

K/KW

Double sided cooled

Single sided cooled

Thermal resistamce - case to heatsink

RQ (c-s)

 

-

-

 

K/KW

Double sided cooled *

Single sided cooled *

Thermal resistamce - junction to heatsink

RQ (j-s)

 

24

48

 

K/KW

Double sided cooled *

Single sided cooled *

Mounting force

P

19

26

 

kN

 

Weight

W

 

 

510

g

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