60mA Asymmetric Thyristor VRRM 30V
$601-99 Piece/Pieces
$48≥100Piece/Pieces
Jenis bayaran: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Pesanan minimum: | 1 Piece/Pieces |
Pengangkutan: | Ocean,Air |
Port: | SHANGHAI |
$601-99 Piece/Pieces
$48≥100Piece/Pieces
Jenis bayaran: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Pesanan minimum: | 1 Piece/Pieces |
Pengangkutan: | Ocean,Air |
Port: | SHANGHAI |
Model No.: YZPST-A1237NC280
Jenama: YZPST
Thyristor Asimetri
YZPST-A1237NC280
Syarikat Asymmetric Thyristor 25V telah lulus pensijilan sistem kualiti ISO9001 dan kualitinya terjamin. Sesuai untuk keperluan SCR anda.
Sekatan - Keadaan Mati
VDRM (1) |
VDSM (1) |
VRRM (1) |
VRSM(1) |
2800 |
2800 |
30 |
30 |
V DRM = Puncak berulang voltan keadaan mati
V RSM = Voltan terbalik puncak tidak berulang
Catatan:
Semua penilaian ditentukan untuk Tj = 25 o C kecuali
dinyatakan sebaliknya.
(1) Semua peringkat voltan ditentukan untuk digunakan
Bentuk gelombang sinusoidal 50Hz / 60zHz di atas
julat suhu -40 hingga +125 o C.
(2) 10 msec. maks. lebar nadi
(3) Nilai maksimum untuk Tj = 125 o C.
(4) Nilai minimum untuk linear dan eksponensial
waveshape hingga 80% dinilai V DRM . Pintu terbuka.
Tj = 125 o C.
(5) Nilai tidak berulang.
(6) Nilai di / dt ditentukan sesuai
dengan EIA / NIMA Standard RS-397, Bahagian
5-2-2-6. Nilai yang ditentukan akan menjadi tambahan
ke yang diperoleh dari rangkaian snubber,
terdiri daripada kapasitor 0.2 mF dan 20 ohm
rintangan selari dengan thristor di bawah
ujian.
Repetitive peak reverse leakage and off state leakage |
IRRM / IDRM
|
10 mA 60 mA (3) |
Critical rate of voltage rise |
dV/dt (4) |
3000 V/msec |
Menjalankan - pada keadaan
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Average value of on-state current |
IT(AV)M |
|
1237 |
|
A |
Sinewave,180o conduction,Tc=55oC |
RMS value of on-state current |
ITRMSM |
|
2555 |
|
A |
Nominal value |
Peak one cycle surge (non repetitive) current |
ITSM |
|
-
18 |
|
KA
KA |
8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
I square t |
I2t |
|
1.62x103 |
|
KA2s |
8.3 msec and 10.0 msec |
Latching current |
IL |
|
- |
|
mA |
VD = 24 V; RL= 12 ohms |
Holding current |
IH |
|
1000 |
|
mA |
VD = 24 V; I = 2.5 A |
Peak on-state voltage |
VTM |
|
2.1 |
|
V |
ITM = 2000 A; Duty Cycle £ 0.01%; Tj =125 oC |
Threshold vlotage |
VT0 |
|
1.7 |
|
V |
|
Slope resistance |
rT |
|
0.21 |
|
mΩ |
|
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
2000 |
|
A/ms |
Switching from VDRM £ 1000 V, non-repetitive |
Critical rate of rise of on-state current (6) |
di/dt |
|
1000 |
|
A/ms |
Switching from VDRM £ 1000 V |
Gating
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Peak gate power dissipation |
PGM |
|
30 |
|
W |
|
Average gate power dissipation |
PG(AV) |
|
10 |
|
W |
|
Peak gate current |
IGM |
|
- |
|
A |
|
Gate current required to trigger all units |
IGT |
|
- 400 - |
|
mA mA mA |
VD = 10 V;RL = 3 ohms;Tj = -40 oC VD = 10 V;RL = 3 ohms;Tj = +25 oC VD = 10 V;RL = 3 ohms;Tj = +125oC |
Gate voltage required to trigger all units
|
VGT |
|
- 3.0 -
|
|
V V V |
VD = 10 V;RL = 3 ohms;Tj = -40 oC VD = 10 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
Peak negative voltage |
VRGM |
|
10 |
|
V |
|
Dinamik
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Delay time |
td |
|
- |
1 |
ms |
ITM = 50 A; VD = Rated VDRM Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms |
Turn-off time (with VR = -50 V) |
tq |
|
- |
20 |
ms |
ITM = 1000 A; di/dt = 25 A/ms; VR ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0; Tj = 125 oC; Duty cycle ³ 0.01% |
Reverse recovery charge |
Qrr |
|
- |
- |
mC |
ITM = 1000 A; di/dt = 25 A/ms; VR ³ -50 V |
KARAKTERISTIK TERHADAP DAN MEKANIKAL
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
Storage temperature |
Tstg |
-40 |
+150 |
|
oC |
|
Thermal resistance - junction to case |
RQ (j-c) |
|
- - |
|
K/KW |
Double sided cooled Single sided cooled |
Thermal resistamce - case to heatsink |
RQ (c-s) |
|
- - |
|
K/KW |
Double sided cooled * Single sided cooled * |
Thermal resistamce - junction to heatsink |
RQ (j-s) |
|
24 48 |
|
K/KW |
Double sided cooled * Single sided cooled * |
Mounting force |
P |
19 |
26 |
|
kN |
|
Weight |
W |
|
|
510 |
g |
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